Inventor · disambiguated record
Ka-Hing Fung
Also filed as: FUNG KA HING SAMUEL · FUNG KA-HING
104 granted patents·17 pending applications·1,626 citations·filing 2000–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD74TAIWAN SEMICONDUCTOR MFG23IBM7FUNG KA-HING6CHENG CHUN-FAI3
Top patents by PatentIndex Score
121 records- 0199US11749755B2Method of forming FinFET with low-dielectric-constant gate electrode spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·4 cites·20 claims
- 0299US6355501B1Three-dimensional chip stacking assemblyIBM·Filed 2000·Granted Mar 12, 2002·802 cites·12 claims
- 0398US10164012B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·32 cites·16 claims
- 0498US9755019B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·23 cites·20 claims
- 0598US9691851B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·22 cites·20 claims
- 0698US7804130B1Self-aligned V-channel MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Sep 28, 2010·60 cites·18 claims
- 0797US9209185B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·23 cites·20 claims
- 0896US9224736B1Structure and method for SRAM FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·20 cites·20 claims
- 0996US9178067B1Structure and method for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·17 cites·17 claims
- 1095US10141430B1Fin structures with uniform threshold voltage distribution and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·10 cites·20 claims
- 1195US9437683B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 6, 2016·8 cites·20 claims
- 1295US8502316B2Self-aligned two-step STI formation through dummy poly removalFUNG KA-HING·Filed 2010·Granted Aug 6, 2013·23 cites·20 claims
- 1393US9721955B2Structure and method for SRAM FinFET device having an oxide featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 1, 2017·9 cites·21 claims
- 1493US8642417B2Method of manufacturing strained source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 4, 2014·14 cites·20 claims
- 1593US8053344B1Methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 8, 2011·13 cites·19 claims
- 1693US6642579B2Method of reducing the extrinsic body resistance in a silicon-on-insulator body contacted MOSFETIBM·Filed 2001·Granted Nov 4, 2003·79 cites·11 claims
- 1792US11004934B2Semiconductor device including a liner layer between a channel and a source/drain epitaxial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 11, 2021·5 cites·20 claims
- 1892US10163905B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 1992US9941406B2FinFETs with source/drain claddingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 10, 2018·6 cites·20 claims
- 2092US8324668B2Dummy structure for isolating devices in integrated circuitsHUANG LI-PING·Filed 2009·Granted Dec 4, 2012·31 cites·23 claims
- 2191US10868186B2FinFETs with source/drain claddingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 15, 2020·2 cites·20 claims
- 2291US9761586B2Method and structure for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·4 cites·19 claims
- 2391US9698058B2Structure and method for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 4, 2017·5 cites·20 claims
- 2491US6806584B2Semiconductor device structure including multiple fets having different spacer widthsIBM·Filed 2002·Granted Oct 19, 2004·61 cites·8 claims
- 2590US10707331B2FinFET device with a reduced widthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 7, 2020·8 cites·20 claims
- 2690US10157748B2Fin profile improvement for high performance transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 18, 2018·5 cites·20 claims
- 2790US9548362B2High mobility devices with anti-punch through layers and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·11 cites·20 claims
- 2889US11469238B2Non-interleaving N-well and P-well pickup region design for IC devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
- 2989US9362404B2Doping for FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·8 cites·18 claims
- 3088US6335214B1SOI circuit with dual-gate transistorsIBM·Filed 2000·Granted Jan 1, 2002·47 cites·7 claims
- 3187US12471317B2Semiconductor device having fin structure including dielectric-containing substrate with semiconductor surface and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 3287US10038094B2FinFET structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·4 cites·20 claims
- 3386US11289494B2Structure and method for SRAM FinFET device having an oxide featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·1 cites·20 claims
- 3486US6960512B2Method for manufacturing a semiconductor device having an improved disposable spacerTAIWAIN SEMICONDUCTOR MFG COMP·Filed 2003·Granted Nov 1, 2005·50 cites·21 claims
- 3585US10468528B2FinFET device with high-k metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 5, 2019·4 cites·20 claims
- 3685US10453961B2Structure and method for SRAM FinfET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 22, 2019·3 cites·20 claims
- 3785US9306067B2Nonplanar device and strain-generating channel dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 5, 2016·4 cites·20 claims
- 3885US9209303B2Structure and method for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·7 cites·20 claims
- 3985US8153492B2Self-aligned V-channel MOSFETFUNG KA-HING·Filed 2010·Granted Apr 10, 2012·6 cites·20 claims
- 4085US2024387736A1FinFET Device With High-K Metal Gate StackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4183US12464697B2Non-interleaving N-well and P-well pickup region design for IC devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 4283US9583623B2Semiconductor device including fin structures disposed over buffer structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·3 cites·20 claims
- 4383US8362573B2Integrated circuits and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·6 cites·20 claims
- 4483US7220630B2Method for selectively forming strained etch stop layers to improve FET charge carrier mobilityTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 22, 2007·40 cites·36 claims
- 4583US6506649B2Method for forming notch gate having self-aligned raised source/drain structureIBM·Filed 2001·Granted Jan 14, 2003·33 cites·13 claims
- 4682US12002811B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 4, 2024·0 cites·20 claims
- 4781US10269964B2FinFETs with source/drain claddingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 4881US8482079B2Semiconductor device and method of manufacturing the sameCHENG CHUN-FAI·Filed 2011·Granted Jul 9, 2013·5 cites·20 claims
- 4981US7545001B2Semiconductor device having high drive current and method of manufacture thereforTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 9, 2009·28 cites·39 claims
- 5080US11854900B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
Showing the top 50 of 121 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →