Inventor · disambiguated record
Katsushi Hashio
Also filed as: HASHIO KATSUSHI
12 granted patents·1 pending application·63 citations·filing 1996–2022
88Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES13
Top patents by PatentIndex Score
13 records- 0175US6572700B2Semiconductor crystal, and method and apparatus of production thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Jun 3, 2003·10 cites·35 claims
- 0274US12091773B2Indium phosphide single-crystal body and indium phosphide single-crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Sep 17, 2024·0 cites·6 claims
- 0370US6866714B2Large size semiconductor crystal with low dislocation densitySUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Mar 15, 2005·10 cites·14 claims
- 0469US11313050B2Indium phosphide single-crystal body and indium phosphide single-crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Apr 26, 2022·0 cites·6 claims
- 0563US6254677B1Semiconductor crystal, and method and apparatus of production thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Jul 3, 2001·19 cites·5 claims
- 0662US11319646B2Gallium arsenide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted May 3, 2022·0 cites·9 claims
- 0758US11926923B2Indium phosphide single crystal and indium phosphide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 12, 2024·0 cites·8 claims
- 0851US5733371AApparatus for growing a single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Mar 31, 1998·15 cites·10 claims
- 0950US6780244B2Method for producing a semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Aug 24, 2004·7 cites·20 claims
- 1045US2025201555A1Group iii-v compound semiconductor single crystal substrate and manufacturing method thereforSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 1143US10971374B2Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Apr 6, 2021·0 cites·8 claims
- 1240US11024705B2Semi-insulating gallium arsenide crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jun 1, 2021·0 cites·5 claims
- 1332US5951758AMethod and apparatus for the growth of a single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Sep 14, 1999·2 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →