Inventor · disambiguated record
Katsuyuki Hironaka
Also filed as: HIRONAKA KATSUYUKI
11 granted patents·2 pending applications·105 citations·filing 1996–2010
88Inventor score
Files withSONY CORP13
Top patents by PatentIndex Score
13 records- 0167US6004392AFerroelectric capacitor and manufacturing the same using bismuth layered oxidesSONY CORP·Filed 1996·Granted Dec 21, 1999·32 cites·9 claims
- 0264US6114199AManufacturing method for ferroelectric film and nonvolatile memory using the sameSONY CORP·Filed 1996·Granted Sep 5, 2000·31 cites·14 claims
- 0357US6544857B1Dielectric capacitor manufacturing method and semiconductor storage device manufacturing methodSONY CORP·Filed 1999·Granted Apr 8, 2003·20 cites·30 claims
- 0453US7306751B2Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particlesSONY CORP·Filed 2006·Granted Dec 11, 2007·0 cites·8 claims
- 0553US7160614B2Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particlesSONY CORP·Filed 2003·Granted Jan 9, 2007·2 cites·12 claims
- 0653US2007042181A1Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particlesSONY CORP·Filed 2006·Application pending·0 cites
- 0749US6043561AElectronic material, its manufacturing method, dielectric capacitor, non-volatile memory and semiconductor deviceSONY CORP·Filed 1998·Granted Mar 28, 2000·15 cites·29 claims
- 0840US6995069B2Dielectric capacitor manufacturing method and semiconductor storage device manufacturing methodSONY CORP·Filed 2002·Granted Feb 7, 2006·0 cites·39 claims
- 0934US2010295037A1Thin film transistor, display, and electronic apparatusSONY CORP·Filed 2010·Application pending·0 cites
- 1032US5935549AMethod of producing bismuth layered compoundSONY CORP·Filed 1996·Granted Aug 10, 1999·3 cites·1 claims
- 1131US5976624AProcess for producing bismuth compounds, and bismuth compoundsSONY CORP·Filed 1996·Granted Nov 2, 1999·2 cites·1 claims
- 1230US5904766AProcess for preparing bismuth compoundsSONY CORP·Filed 1996·Granted May 18, 1999·0 cites·11 claims
- 1329US6251360B1Method of producing bismuth layered compoundSONY CORP·Filed 1999·Granted Jun 26, 2001·0 cites·19 claims
Join the waitlist — get patent alerts
Get an alert when Katsuyuki Hironaka files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →