Inventor · disambiguated record
Kai-Chun Hsu
Also filed as: HSU KAI-CHUN
15 granted patents·8 pending applications·18 citations·filing 2010–2025
89Inventor score
Top patents by PatentIndex Score
23 records- 0193US11222915B2Pad structure for front side illuminated image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·7 cites·20 claims
- 0282US2025366242A1Isolation structures in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0381US9627326B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·2 cites·20 claims
- 0480US2025344545A1Back-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0577US11837622B2Image sensor comprising polysilicon gate electrode and nitride hard maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 0676US11996433B2Pad structure for front side illuminated image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 0776US9355964B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 31, 2016·2 cites·20 claims
- 0875US2025318292A1Isolation structure configured to reduce cross talk in image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0973US10074612B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 11, 2018·1 cites·20 claims
- 1072US11444116B2Method for forming image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 1172US11322540B2Pad structure for front side illuminated image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·0 cites·20 claims
- 1272US8304354B2Methods to avoid laser anneal boundary effect within BSI CMOS image sensor arrayHSU KAI-CHUN·Filed 2010·Granted Nov 6, 2012·4 cites·20 claims
- 1370US10833119B2Pad structure for front side illuminated image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 10, 2020·1 cites·20 claims
- 1469US12514009B2Isolation structure configured to reduce cross talk in image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 1567US2023317758A1Isolation structures in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1665US10103287B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 16, 2018·1 cites·14 claims
- 1762US10879305B2Image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 1860US2025126914A1Image sensors and methods of manufacturing themTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1960US2025248145A1Image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2059US2025151433A1Semiconductor structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2156US8802457B2Backside surface treatment of semiconductor chipsLAI CHIH-YU·Filed 2011·Granted Aug 12, 2014·0 cites·20 claims
- 2255US10204960B2Method of forming polysilicon gate structure in image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 12, 2019·0 cites·20 claims
- 2355US2024429258A1Guard ring with deep trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →