Inventor · disambiguated record
Katsuhiro Imai
Also filed as: IMAI KATSUHIRO
68 granted patents·19 pending applications·204 citations·filing 1996–2024
98Inventor score
Files withNGK INSULATORS LTD57SEIKO EPSON CORP6EPSON IMAGING DEVICES CORP3IMAI KATSUHIRO3SHIMODAIRA TAKANAO3
Top patents by PatentIndex Score
87 records- 0191US8795431B2Method for producing gallium nitride layer and seed crystal substrate used in sameNGK INSULATORS LTD·Filed 2013·Granted Aug 5, 2014·7 cites·12 claims
- 0289US7459023B2Method for producing semiconductor crystalTOYODA GOSEI KK·Filed 2006·Granted Dec 2, 2008·7 cites·20 claims
- 0385US9312446B2Gallium nitride self-supported substrate, light-emitting device and manufacturing method thereforNGK INSULATORS LTD·Filed 2014·Granted Apr 12, 2016·1 cites·46 claims
- 0485US7815733B2Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystalNGK INSULATORS LTD·Filed 2007·Granted Oct 19, 2010·5 cites·16 claims
- 0583US7483099B2Liquid crystal device and electronic apparatusEPSON IMAGING DEVICES CORP·Filed 2006·Granted Jan 27, 2009·7 cites·12 claims
- 0682US11594670B2MEMs device and electronic deviceSEIKO EPSON CORP·Filed 2020·Granted Feb 28, 2023·1 cites·7 claims
- 0781US9627568B2Photovoltaic elementNGK INSULATORS LTD·Filed 2015·Granted Apr 18, 2017·2 cites·16 claims
- 0880US10041186B2Method for producing nitride crystalNGK INSULATORS LTD·Filed 2016·Granted Aug 7, 2018·1 cites·6 claims
- 0980US9640720B2Surface light-emission element using zinc oxide substrateNGK INSULATORS LTD·Filed 2015·Granted May 2, 2017·3 cites·16 claims
- 1080US8507364B2N-type group III nitride-based compound semiconductor and production method thereforNAGAI SEIJI·Filed 2009·Granted Aug 13, 2013·4 cites·11 claims
- 1180US8241422B2Gallium nitride single crystal growing method and gallium nitride single crystalIWAI MAKOTO·Filed 2005·Granted Aug 14, 2012·3 cites·6 claims
- 1279US8084281B2Semiconductor substrate, electronic device, optical device, and production methods thereforSHIBATA NAOKI·Filed 2007·Granted Dec 27, 2011·6 cites·20 claims
- 1377US7449064B2Method for producing AlN single crystal and AlN single crystalNGK INSULATORS LTD·Filed 2007·Granted Nov 11, 2008·2 cites·5 claims
- 1477US5690734ASingle crystal growing methodNGK INSULATORS LTD·Filed 1996·Granted Nov 25, 1997·29 cites·30 claims
- 1576US8025728B2Method for manufacturing single crystal of nitrideNGK INSULATORS LTD·Filed 2008·Granted Sep 27, 2011·2 cites·7 claims
- 1673US5716748ADeveloper and finely particulate polymerNIPPON ZEON CO·Filed 1996·Granted Feb 10, 1998·23 cites·20 claims
- 1770US9548418B2Gallium nitride self-supported substrate, light-emitting device and manufacturing method thereforNGK INSULATORS LTD·Filed 2016·Granted Jan 17, 2017·0 cites·25 claims
- 1869US5961720ASingle crystal-growing apparatusNGK INSULATORS LTD·Filed 1997·Granted Oct 5, 1999·21 cites·22 claims
- 1967US9287453B2Composite substrates and functional deviceNGK INSULATORS LTD·Filed 2015·Granted Mar 15, 2016·1 cites·7 claims
- 2067US6565654B2Process and apparatus for producing a planar body of an oxide single crystalNGK INSULATORS LTD·Filed 2001·Granted May 20, 2003·8 cites·2 claims
- 2167US6440628B1Tones for development of electrostatic image and production process thereofNIPPON ZEON CO·Filed 1998·Granted Aug 27, 2002·15 cites·19 claims
- 2266US11862689B2Group-III element nitride semiconductor substrateNGK INSULATORS LTD·Filed 2023·Granted Jan 2, 2024·0 cites·9 claims
- 2366US9893234B2Composite substrate for light-emitting element and production method thereforNGK INSULATORS LTD·Filed 2016·Granted Feb 13, 2018·1 cites·39 claims
- 2464US6036775ASingle crystal-growing method and apparatusNGK INSULATORS LTD·Filed 1999·Granted Mar 14, 2000·13 cites·12 claims
- 2564US2020411718A1Method of producing substrates including gallium nitrideNGK INSULATORS LTD·Filed 2020·Application pending·0 cites
- 2663US2025011969A1Group 13 nitride single crystal substrateNGK INSULATORS LTD·Filed 2024·Application pending·0 cites
- 2762US9816198B2Method for producing zinc oxide single crystalNGK INSULATORS LTD·Filed 2014·Granted Nov 14, 2017·0 cites·5 claims
- 2862US9327994B2Zinc oxide powder and process for manufacturing sameNGK INSULATORS LTD·Filed 2014·Granted May 3, 2016·0 cites·13 claims
- 2962US6447603B2Process and apparatus for producing oxide single crystalsNGK INSULATORS LTD·Filed 2001·Granted Sep 10, 2002·4 cites·6 claims
- 3061US10707373B2Polycrystalline gallium nitride self-supported substrate and light emitting element using sameNGK INSULATORS LTD·Filed 2018·Granted Jul 7, 2020·0 cites·13 claims
- 3161US9663871B2Method for forming a single crystal by spraying the raw material onto a seed substrateNGK INSULATORS LTD·Filed 2013·Granted May 30, 2017·0 cites·7 claims
- 3261US7670430B2Method of recovering sodium metal from fluxNGK INSULATORS LTD·Filed 2008·Granted Mar 2, 2010·0 cites·4 claims
- 3360US10598369B2Heat discharge structures for light source devices and light source systemsNGK INSULATORS LTD·Filed 2018·Granted Mar 24, 2020·0 cites·8 claims
- 3460US9318307B2Zinc oxide sputtering target and method for producing sameNGK INSULATORS LTD·Filed 2014·Granted Apr 19, 2016·0 cites·11 claims
- 3559US10804432B2Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using sameNGK INSULATORS LTD·Filed 2018·Granted Oct 13, 2020·0 cites·13 claims
- 3659US8068202B2Liquid crystal deviceHARADA NORIHITO·Filed 2007·Granted Nov 29, 2011·2 cites·22 claims
- 3759US2024347604A1Group iii element nitride semiconductor substrate, epitaxial substrate, and functional elementNGK INSULATORS LTD·Filed 2024·Application pending·0 cites
- 3859US2024278286A1Ultrasonic deviceSEIKO EPSON CORP·Filed 2024·Application pending·0 cites
- 3959US2023395373A1Group-iii element nitride semiconductor substrateNGK INSULATORS LTD·Filed 2023·Application pending·0 cites
- 4058US9919931B2Zinc oxide sputtering targetNGK INSULATORS LTD·Filed 2015·Granted Mar 20, 2018·0 cites·5 claims
- 4158US6527851B2Process for producing a planar body of an oxide single crystalNGK INSULATORS LTD·Filed 2001·Granted Mar 4, 2003·3 cites·5 claims
- 4258US2024002997A1Sputtering targetNGK INSULATORS LTD·Filed 2023·Application pending·0 cites
- 4357US10734548B2Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using sameNGK INSULATORS LTD·Filed 2018·Granted Aug 4, 2020·0 cites·13 claims
- 4457US6402835B2Process for producing a raw material powder to grow a single crystal and the single crystalNGK INSULATORS LTD·Filed 2001·Granted Jun 11, 2002·3 cites·38 claims
- 4557US2023352298A1Group-iii element nitride semiconductor substrateNGK INSULATORS LTD·Filed 2023·Application pending·0 cites
- 4656US5919304AMethod and apparatus for producing oxide series single crystalsNGK INSULATORS LTD·Filed 1996·Granted Jul 6, 1999·12 cites·9 claims
- 4756US2023215969A9Method for producing group 13 element nitride crystal layer, and seed crystal substrateNGK INSULATORS LTD·Filed 2022·Application pending·0 cites
- 4855US10156022B2Method for producing nitride of group-13 element, and melt compositionNGK INSULATORS LTD·Filed 2016·Granted Dec 18, 2018·0 cites·5 claims
- 4955US8154675B2Liquid crystal display panel and method for manufacturing the sameIMAI KATSUHIRO·Filed 2009·Granted Apr 10, 2012·2 cites·4 claims
- 5055US2017211797A1Heat Discharge Structures for Light Source Devices and Light Source SystemsNGK INSULATORS LTD·Filed 2017·Application pending·0 cites
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →