Inventor · disambiguated record
Katsuyuki Iwata
Also filed as: IWATA KATSUYUKI
12 granted patents·4 pending applications·489 citations·filing 1997–2012
92Inventor score
Top patents by PatentIndex Score
16 records- 0196US6059885AVapor deposition apparatus and method for forming thin filmTOSHIBA CERAMICS CO·Filed 1997·Granted May 9, 2000·290 cites·25 claims
- 0293US8783063B2Glass substrate for magnetic disk and manufacturing method of the sameOSAKABE KINOBU·Filed 2012·Granted Jul 22, 2014·51 cites·17 claims
- 0387US8119267B2Glass substrate for magnetic disk and manufacturing method of the sameOSAKABE KINOBU·Filed 2008·Granted Feb 21, 2012·9 cites·18 claims
- 0484US6113705AHigh-speed rotational vapor deposition apparatus and high-speed rotational vapor deposition thin film methodTOSHIBA CERAMICS CO·Filed 1998·Granted Sep 5, 2000·68 cites·6 claims
- 0583US8652660B2Glass substrate for magnetic recording medium and its useISONO HIDEKI·Filed 2011·Granted Feb 18, 2014·7 cites·25 claims
- 0683US6250914B1Wafer heating device and method of controlling the sameTOSHIBA MACHINE CO LTD·Filed 2000·Granted Jun 26, 2001·32 cites·4 claims
- 0761US8413464B2Method for producing glass substrate for magnetic disk and method for producing magnetic diskIWATA KATSUYUKI·Filed 2007·Granted Apr 9, 2013·2 cites·12 claims
- 0861US6461428B2Method and apparatus for controlling rise and fall of temperature in semiconductor substratesTOSHIBA CERAMICS CO·Filed 2000·Granted Oct 8, 2002·6 cites·14 claims
- 0955US6025596AMethod for measuring epitaxial film thickness of multilayer epitaxial waferTOSHIBA CERAMICS CO·Filed 1998·Granted Feb 15, 2000·21 cites·3 claims
- 1047US2007003796A1Method for manufacturing magnetic disk glass substrate and method for manufacturing magnetic diskHOYA CORP·Filed 2006·Application pending·0 cites
- 1145US8613206B2Method for manufacturing glass substrate for magnetic disk and method for manufacturing magnetic diskIWATA KATSUYUKI·Filed 2007·Granted Dec 24, 2013·0 cites·23 claims
- 1239US6485573B2Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatusTOSHIBA CERAMICS CO·Filed 2001·Granted Nov 26, 2002·0 cites·4 claims
- 1338US2002009868A1Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said methodTOSHIBA CERAMICS CO·Filed 2001·Application pending·0 cites
- 1435US2003045128A1Wafer transfer method performed with vapor thin film growth system and wafer support member used for this methodTOSHIBA MACHINE CO LTD·Filed 2002·Application pending·0 cites
- 1533US2002182892A1Wafer transfer method performed with vapor thin film growth system and wafer support member used for this methodFiled 2000·Application pending·0 cites
- 1632US6132519AVapor deposition apparatus and vapor deposition methodTOSHIBA CERAMICS CO·Filed 1997·Granted Oct 17, 2000·3 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →