Inventor · disambiguated record
Kamal M. Karda
Also filed as: KARDA KAMAL · KARDA KAMAL M
152 granted patents·61 pending applications·455 citations·filing 2011–2025
99Inventor score
Files withMICRON TECHNOLOGY INC203LODESTAR LICENSING GROUP LLC5KARDA KAMAL M3GUHA JAYDIP1KARDA KAMAL1
Top patents by PatentIndex Score
213 records- 0198US11476252B2Memory device having 2-transistor vertical memory cell and shared channel regionMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 18, 2022·7 cites·20 claims
- 0298US11335684B2Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2020·Granted May 17, 2022·9 cites·30 claims
- 0398US9559118B2Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistorsMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 31, 2017·21 cites·18 claims
- 0498US9305929B1Memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 5, 2016·60 cites·35 claims
- 0598US9276092B1Transistors and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 1, 2016·43 cites·35 claims
- 0697US12266660B2Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2023·Granted Apr 1, 2025·3 cites·20 claims
- 0797US11616073B1Memory device having 2-transistor vertical memory cell and wrapped data line structureMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 28, 2023·3 cites·17 claims
- 0897US9337210B2Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistorsMICRON TECHNOLOGY INC·Filed 2013·Granted May 10, 2016·36 cites·26 claims
- 0996US11871589B2Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
- 1096US11488981B2Array of vertical transistors and method used in forming an array of vertical transistorsMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 1, 2022·4 cites·22 claims
- 1196US10943953B2Semiconductor devices, hybrid transistors, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 9, 2021·9 cites·26 claims
- 1296US10748931B2Integrated assemblies having ferroelectric transistors with body regions coupled to carrier reservoirsMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 18, 2020·11 cites·23 claims
- 1396US9673203B2Memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 6, 2017·7 cites·28 claims
- 1495US12219783B2Semiconductor devices and hybrid transistorsMICRON TECHNOLOGY INC·Filed 2023·Granted Feb 4, 2025·1 cites·16 claims
- 1595US11778806B2Memory device having 2-transistor vertical memory cell and separate read and write gatesMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 3, 2023·2 cites·18 claims
- 1695US11769795B2Channel conduction in semiconductor devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 26, 2023·2 cites·19 claims
- 1795US11688450B2Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 27, 2023·3 cites·10 claims
- 1895US11411118B2Integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 9, 2022·3 cites·32 claims
- 1994US12080331B2Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 3, 2024·2 cites·10 claims
- 2094US11950426B2Memory device having 2-transistor vertical memory cell and wrapped data line structureMICRON TECHNOLOGY INC·Filed 2023·Granted Apr 2, 2024·1 cites·20 claims
- 2194US11538809B2Metal insulator semiconductor (MIS) contact in three dimensional (3D) vertical memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 27, 2022·3 cites·27 claims
- 2294US10937482B2Memory cells and arrays of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 2, 2021·10 cites·13 claims
- 2394US10381357B2Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltagesMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 13, 2019·13 cites·6 claims
- 2494US9887204B2Memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 6, 2018·4 cites·19 claims
- 2594US9559194B2Transistors and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 31, 2017·7 cites·25 claims
- 2694US9076686B1Field effect transistor constructions and memory arraysMICRON TECHNOLOGY INC·Filed 2014·Granted Jul 7, 2015·20 cites·38 claims
- 2793US11856799B2Semiconductor devices, hybrid transistors, and related methodsMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 26, 2023·2 cites·18 claims
- 2893US11641732B2Self-aligned etch back for vertical three dimensional (3D) memoryMICRON TECHNOLOGY INC·Filed 2021·Granted May 2, 2023·2 cites·20 claims
- 2993US11495600B2Vertical three-dimensional memory with vertical channelMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 8, 2022·3 cites·28 claims
- 3093US10217753B2Memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 26, 2019·3 cites·16 claims
- 3193US9219225B2Multi-bit ferroelectric memory device and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 22, 2015·11 cites·30 claims
- 3292US11532630B2Channel formation for vertical three dimensional (3D) memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 20, 2022·3 cites·21 claims
- 3392US9276134B2Field effect transistor constructions and memory arraysMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 1, 2016·11 cites·33 claims
- 3492US8878271B2Vertical access device and apparatuses having a body connection line, and related method of operating the sameMICRON TECHNOLOGY INC·Filed 2013·Granted Nov 4, 2014·12 cites·25 claims
- 3591US11653489B2Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2020·Granted May 16, 2023·2 cites·22 claims
- 3691US11139396B2Devices including vertical transistors, and related methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 5, 2021·4 cites·31 claims
- 3791US10607988B2Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltagesMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 31, 2020·8 cites·19 claims
- 3890US11776907B2Memory device having 2-transistor vertical memory cell and a common plateMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 3, 2023·2 cites·20 claims
- 3990US11665880B2Memory device having 2-transistor vertical memory cell and a common plateMICRON TECHNOLOGY INC·Filed 2020·Granted May 30, 2023·2 cites·12 claims
- 4090US11296094B2Memory device having shared access line for 2-transistor vertical memory cellMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 5, 2022·4 cites·15 claims
- 4190US9773976B2Transistors and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 26, 2017·4 cites·40 claims
- 4290US9450024B2Field effect transistor constructions and memory arraysMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 20, 2016·5 cites·23 claims
- 4389US11769542B2Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulatorMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 26, 2023·1 cites·15 claims
- 4489US11018255B2Devices and systems with string drivers including high band gap material and methods of formationMICRON TECHNOLOGY INC·Filed 2018·Granted May 25, 2021·4 cites·24 claims
- 4589US10756093B1Methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 25, 2020·6 cites·31 claims
- 4689US2025374613A1Ferroelectric Transistors and Assemblies Comprising Ferroelectric TransistorsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4788US10937904B2Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 2, 2021·4 cites·3 claims
- 4887US12283636B2Devices including channel materials and passivation materialsMICRON TECHNOLOGY INC·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 4987US11985806B2Vertical 2-transistor memory cellMICRON TECHNOLOGY INC·Filed 2019·Granted May 14, 2024·3 cites·35 claims
- 5087US8450175B2Methods of forming a vertical transistor and at least a conductive line electrically coupled therewithGUHA JAYDIP·Filed 2011·Granted May 28, 2013·8 cites·11 claims
Showing the top 50 of 213 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →