Inventor · disambiguated record
Kai-Shiang Kuo
Also filed as: KUO KAI-SHIANG
17 granted patents·4 pending applications·61 citations·filing 2013–2024
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21
Top patents by PatentIndex Score
21 records- 0197US11374127B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·4 cites·20 claims
- 0297US9754822B1Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·30 cites·20 claims
- 0391US8962473B2Method of forming hybrid diffusion barrier layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 24, 2015·10 cites·19 claims
- 0490US10727350B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·4 cites·20 claims
- 0588US10269627B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 0688US10199500B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 5, 2019·4 cites·20 claims
- 0787US10840134B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
- 0887US2024395939A1Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0986US11854878B2Bi-layer alloy liner for interconnect metallization and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·2 cites·20 claims
- 1083US12166128B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1179US11777035B2Multi-layer film device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 1278US12354910B2Bi-layer alloy liner for interconnect metallization and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1376US2024395617A1Bl-LAYER ALLOY LINER FOR INTERCONNECT METALLIZATION AND METHODS OF FORMING THE SAMETAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1474US2024350289A1Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1573US12347728B2Bi-layer alloy liner for interconnect metallization and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 1672US12080594B2Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 1772US2024387256A1Ruthenium-based liner for a copper interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1871US11328952B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 1967US11430692B2Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 2066US12094770B2Ruthenium-based liner for a copper interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 2158US9812397B2Method of forming hybrid diffusion barrier layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 7, 2017·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →