Inventor · disambiguated record
Kao-Feng Lin
Also filed as: LIN KAO-FENG
7 granted patents·2 pending applications·5 citations·filing 2014–2024
75Inventor score
Top patents by PatentIndex Score
9 records- 0189US10685842B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·4 cites·20 claims
- 0286US12512324B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 0382US11295956B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·1 cites·20 claims
- 0477US11972951B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 0572US2025063758A1Conductive structures and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0665US12170331B2Conductive structures and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 17, 2024·0 cites·20 claims
- 0753US2022375868A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 0851US11424185B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 0948US9580814B2Chemical conversion coating and method of fabricating the sameUNIV NAT TAIWAN·Filed 2014·Granted Feb 28, 2017·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →