Inventor · disambiguated record
Kan-Ju Lin
Also filed as: LIN KAN · LIN KAN-JU
11 granted patents·16 pending applications·2 citations·filing 2018–2025
80Inventor score
Top patents by PatentIndex Score
27 records- 0188US11011611B2Semiconductor device with low resistivity contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·2 cites·20 claims
- 0282US2025349605A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0378US2025351424A1Void-free conductive contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0477US12513652B2Method, apparatus and computer program productNOKIA SOLUTIONS & NETWORKS OY·Filed 2024·Granted Dec 30, 2025·0 cites·16 claims
- 0576US2025351524A1Molybdenum-Containing Device-Level Interconnects and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0675US2024404876A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0772US2024274687A1Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0871US2024379423A1Barrier layer for an interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0968US12272621B2Buried conductive structure in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 1068US12002867B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 1168US2024395894A1Molybdenum-Containing Device-Level Interconnects and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1267US2025226291A1Buried conductive structure in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1366US12494423B2Semiconductor device including stacked via contact and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 1466US2025254907A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1566US2025183040A1Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1665US2024021687A1Void-Free Conductive Contact FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1765US2023036693A1Semiconductor Devices and Methods of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1864US12255070B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 18, 2025·0 cites·20 claims
- 1962US12310050B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 20, 2025·0 cites·20 claims
- 2055US12439625B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 2155US2025233074A1Methods for selective metal cap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2254US10700177B2Semiconductor device with low resistivity contact structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 2353US12041571B2Method, apparatus and computer program productNOKIA SOLUTIONS & NETWORKS OY·Filed 2018·Granted Jul 16, 2024·0 cites·20 claims
- 2451US2024313075A1Method and device related to seamless metal contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2548US2023395429A1Conductive structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2648US2023137108A1Semiconductor interconnect structures and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2746US11222818B2Formation method of semiconductor device structure with metal-semiconductor compound regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →