Inventor · disambiguated record
Kazuyoshi Maekawa
Also filed as: MAEKAWA KAZUYOSHI
40 granted patents·6 pending applications·418 citations·filing 1992–2025
98Inventor score
Files withRENESAS ELECTRONICS CORP18RENESAS TECH CORP10MITSUBISHI ELECTRIC CORP9MAEKAWA KAZUYOSHI3YANO HISASHI2
Top patents by PatentIndex Score
46 records- 0194US9972505B2Semiconductor device and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2015·Granted May 15, 2018·11 cites·9 claims
- 0294US8432037B2Semiconductor device with a line and method of fabrication thereofMAEKAWA KAZUYOSHI·Filed 2012·Granted Apr 30, 2013·21 cites·9 claims
- 0392US10665502B2Semiconductor device with an interconnection layer and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2019·Granted May 26, 2020·2 cites·13 claims
- 0492US7192871B2Semiconductor device with a line and method of fabrication thereofRENESAS TECH CORP·Filed 2005·Granted Mar 20, 2007·18 cites·3 claims
- 0591US11450561B2Semiconductor device with copper interconnectionsRENESAS ELECTRONICS CORP·Filed 2020·Granted Sep 20, 2022·2 cites·18 claims
- 0691US9508646B2Semicondutor device with copper plugs having different resistance valuesRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 29, 2016·6 cites·11 claims
- 0791US5565708ASemiconductor device comprising composite barrier layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 15, 1996·107 cites·13 claims
- 0889US10192755B2Semiconductor device and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2018·Granted Jan 29, 2019·5 cites·15 claims
- 0987US9406628B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 2, 2016·7 cites·17 claims
- 1081US12080591B2Semiconductor device having interconnection structure and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2022·Granted Sep 3, 2024·0 cites·19 claims
- 1181US8125085B2Semiconductor device having wiring with oxide layer of impurity from the wiringMAEKAWA KAZUYOSHI·Filed 2009·Granted Feb 28, 2012·11 cites·16 claims
- 1280US9530819B2Manufacturing method of semiconductor integrated circuit deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Dec 27, 2016·3 cites·12 claims
- 1380US8749064B2Semiconductor device with a line and method of fabrication thereofRENESAS ELECTRONICS CORP·Filed 2013·Granted Jun 10, 2014·4 cites·9 claims
- 1479US10204853B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Feb 12, 2019·3 cites·19 claims
- 1578US7936069B2Semiconductor device with a line and method of fabrication thereofRENESAS ELECTRONICS CORP·Filed 2010·Granted May 3, 2011·3 cites·20 claims
- 1676US7709955B2Semiconductor device with a line and method of fabrication thereofRENESAS TECH CORP·Filed 2007·Granted May 4, 2010·4 cites·11 claims
- 1774US10083924B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2014·Granted Sep 25, 2018·3 cites·15 claims
- 1872US5313100AMultilayer interconnection structure for a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted May 17, 1994·37 cites·11 claims
- 1971US7371681B2Method of manufacturing a semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted May 13, 2008·2 cites·1 claims
- 2070US6864183B2Method for manufacturing a semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Mar 8, 2005·15 cites·6 claims
- 2170US2025361905A1Bending meshing type gear deviceSUMITOMO HEAVY INDUSTRIES·Filed 2025·Application pending·0 cites
- 2269US9263497B2Manufacturing method of back illumination CMOS image sensor device using wafer bondingRENESAS ELECTRONICS CORP·Filed 2013·Granted Feb 16, 2016·0 cites·11 claims
- 2368US9608034B2Manufacturing method of back illumination CMOS image sensor device using wafer bondingRENESAS ELECTRONICS CORP·Filed 2016·Granted Mar 28, 2017·1 cites·3 claims
- 2468US6171957B1Manufacturing method of semiconductor device having high pressure reflow processMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 9, 2001·35 cites·5 claims
- 2567US7538030B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2007·Granted May 26, 2009·1 cites·1 claims
- 2667US5475267AMultilayer interconnection structure for a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Dec 12, 1995·29 cites·22 claims
- 2765US7564133B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Jul 21, 2009·3 cites·7 claims
- 2865US6329284B2Manufacturing process of a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 11, 2001·31 cites·16 claims
- 2964US6002175ASemiconductor device with improved connection hole for embedding an electrically conductive layer portionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 14, 1999·31 cites·9 claims
- 3063US7709388B2Semiconductor device with a line and method of fabrication thereofRENESAS TECH CORP·Filed 2007·Granted May 4, 2010·1 cites·5 claims
- 3162US2018240700A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 3259US9972530B2Method of manufacturing semiconductor device including copper interconnectionsRENESAS ELECTRONICS CORP·Filed 2016·Granted May 15, 2018·0 cites·13 claims
- 3357US8304908B2Semiconductor device having a multilevel interconnect structure and method for fabricating the sameKOIKE JUNICHI·Filed 2009·Granted Nov 6, 2012·0 cites·8 claims
- 3457US7479446B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2007·Granted Jan 20, 2009·0 cites·1 claims
- 3554US8709939B2Semiconductor device having a multilevel interconnect structure and method for fabricating the sameSEMICONDUCTOR TECH ACAD RES CT·Filed 2012·Granted Apr 29, 2014·0 cites·11 claims
- 3651US8222146B2Semiconductor device with a line and method of fabrication thereofMAEKAWA KAZUYOSHI·Filed 2011·Granted Jul 17, 2012·0 cites·20 claims
- 3750US6975007B2Semiconductor device including a polysilicon, barrier structure, and tungsten layer electrodeRENESAS TECH CORP·Filed 2003·Granted Dec 13, 2005·1 cites·1 claims
- 3849US6599820B1Method of producing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 29, 2003·5 cites·1 claims
- 3948US9607956B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Mar 28, 2017·0 cites·5 claims
- 4047US2023097408A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2021·Application pending·0 cites
- 4146US6657301B2Contact structure, method of forming the same, semiconductor device, and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Dec 2, 2003·4 cites·21 claims
- 4242US2008197496A1Semiconductor device having at least two layers of wirings stacked therein and method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 4341US6333259B1Semiconductor device and apparatus and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 25, 2001·8 cites·5 claims
- 4436US5712140AMethod of manufacturing interconnection structure of a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 27, 1998·4 cites·7 claims
- 4535US2007145600A1Semiconductor device and manufacturing method thereofYANO HISASHI·Filed 2006·Application pending·0 cites
- 4635US2007145591A1Semiconductor device and manufacturing method therofYANO HISASHI·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →