Inventor · disambiguated record
Katsuhide Manabe
Also filed as: MANABE KATSUHIDE
39 granted patents·5 pending applications·2,731 citations·filing 1976–2014
99Inventor score
Top patents by PatentIndex Score
44 records- 0199US5247533AGallium nitride group compound semiconductor laser diodeTOYODA GOSEI KK·Filed 1991·Granted Sep 21, 1993·290 cites·7 claims
- 0298US7138286B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2005·Granted Nov 21, 2006·47 cites·2 claims
- 0396US5408120ALight-emitting device of gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 1993·Granted Apr 18, 1995·200 cites·14 claims
- 0496US5389571AMethod of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layerAMANO HIROSHI·Filed 1993·Granted Feb 14, 1995·260 cites·2 claims
- 0595US5122845ASubstrate for growing gallium nitride compound-semiconductor device and light emitting diodeTOYODA GOSEI KK·Filed 1990·Granted Jun 16, 1992·217 cites·10 claims
- 0695US4911102AProcess of vapor growth of gallium nitride and its apparatusTOYODA GOSEI KK·Filed 1988·Granted Mar 27, 1990·361 cites·6 claims
- 0794US5239188AGallium nitride base semiconductor deviceAMANO HIROSHI·Filed 1992·Granted Aug 24, 1993·163 cites·2 claims
- 0892US4369225AFlexible lustrously metallized resinous articles and a process for manufacturing sameTOYODA GOSEI KK·Filed 1980·Granted Jan 18, 1983·71 cites·14 claims
- 0991US5620557ASapphireless group III nitride semiconductor and method for making sameTOYODA GOSEI KK·Filed 1995·Granted Apr 15, 1997·139 cites·12 claims
- 1089US5278433ALight-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layerTOYODA GOSEI KK·Filed 1992·Granted Jan 11, 1994·86 cites·19 claims
- 1187USRE36747ELight-emitting device of gallium nitride compound semiconductorTOYODA GOSEI KK·Filed 1997·Granted Jun 27, 2000·101 cites·14 claims
- 1287US6005258ALight-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impuritiesTOYODA GOSEI KK·Filed 1997·Granted Dec 21, 1999·69 cites·13 claims
- 1387US4465715AProcess for the pretreatment of a polyolefin product before coatingTOYODA GOSEI KK·Filed 1981·Granted Aug 14, 1984·41 cites·6 claims
- 1486US6362017B1Light-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 2000·Granted Mar 26, 2002·44 cites·24 claims
- 1585US6265726B1Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensityTOYODA GOSEI KK·Filed 1999·Granted Jul 24, 2001·62 cites·9 claims
- 1685US5733796ALight-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1995·Granted Mar 31, 1998·77 cites·2 claims
- 1784US4816124AMetal-coated fibrous objectsTOYODA GOSEI KK·Filed 1986·Granted Mar 28, 1989·46 cites·2 claims
- 1883US7867800B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2007·Granted Jan 11, 2011·5 cites·3 claims
- 1983US5218216AGallium nitride group semiconductor and light emitting diode comprising it and the process of producing the sameTOYODA GOSEI KK·Filed 1991·Granted Jun 8, 1993·78 cites·7 claims
- 2080US5583879AGallum nitride group compound semiconductor laser diodeTOYODA GOSEI KK·Filed 1995·Granted Dec 10, 1996·48 cites·7 claims
- 2177US7332366B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2006·Granted Feb 19, 2008·3 cites·2 claims
- 2274US5650641ASemiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such deviceTOYODA GOSEI KK·Filed 1995·Granted Jul 22, 1997·56 cites·28 claims
- 2374US4551387AColored resinous articles with concealed metallic lusterTOYODA GOSEI KK·Filed 1983·Granted Nov 5, 1985·24 cites·21 claims
- 2472US4668479APlasma processing apparatusTOYODA GOSEI KK·Filed 1985·Granted May 26, 1987·37 cites·39 claims
- 2571US5205905ADry etching method for semiconductorTOYODA GOSEI KK·Filed 1991·Granted Apr 27, 1993·49 cites·8 claims
- 2668US4104432APlastic articles having on the surface thereof a protected metal filmTOYODA GOSEI KK·Filed 1976·Granted Aug 1, 1978·22 cites·8 claims
- 2767US2014239313A1Light-emitting semiconductor device using group iii nitrogen compoundTOYODA GOSEI KK·Filed 2014·Application pending·0 cites
- 2865US5496766AMethod for producing a luminous element of III-group nitridePIONEER ELECTRONIC CORP·Filed 1995·Granted Mar 5, 1996·35 cites·4 claims
- 2962US5905276ALight emitting semiconductor device using nitrogen-Group III compoundAKASAKI ISAMU·Filed 1997·Granted May 18, 1999·34 cites·11 claims
- 3062US2012217510A1Light-emitting semiconductor device using group iii nitrogen compoundMANABE KATSUHIDE·Filed 2012·Application pending·0 cites
- 3161US6607595B1Method for producing a light-emitting semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Aug 19, 2003·8 cites·100 claims
- 3261US6472690B1Gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·7 cites·37 claims
- 3359US2011101412A1Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2011·Application pending·0 cites
- 3456US7001790B2Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensityTOYODA GOSEI KK·Filed 2001·Granted Feb 21, 2006·3 cites·3 claims
- 3555US6249012B1Light emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1997·Granted Jun 19, 2001·13 cites·9 claims
- 3654US4836901ACorona discharge treating method and apparatus for resin moldingsTOYODA GOSEI KK·Filed 1988·Granted Jun 6, 1989·19 cites·21 claims
- 3753US6984536B2Method for manufacturing a gallium nitride group compound semiconductorUNIV NAGOYA·Filed 2002·Granted Jan 10, 2006·4 cites·51 claims
- 3847US6830992B1Method for manufacturing a gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Dec 14, 2004·1 cites·32 claims
- 3944US2009026926A1Transparent conductive film and dispersion-type electroluminescence device using said filmFUJIFILM CORP·Filed 2006·Application pending·0 cites
- 4041US6472689B1Light emitting deviceTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·0 cites·37 claims
- 4139US4214016AProcess for manufacturing plastic articles having on the surface thereof a protected metal filmTOYODA GOSEI K K TOYODA SYNTHE·Filed 1978·Granted Jul 22, 1980·8 cites·8 claims
- 4236US7294391B2Contamination resistant fiber sheetSUZUTORA KK·Filed 2003·Granted Nov 13, 2007·1 cites·9 claims
- 4335US2006084335A1Contamination resistant fiber sheetSUZUTORA KK·Filed 2005·Application pending·0 cites
- 4434US6593599B1Light-emitting semiconductor device using gallium nitride group compoundJAPAN SCIENCE & TECH CORP·Filed 1999·Granted Jul 15, 2003·2 cites·41 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →