Inventor · disambiguated record
Kaoru Mikagi
Also filed as: MIKAGI KAORU
26 granted patents·1 pending application·637 citations·filing 1993–2009
97Inventor score
Top patents by PatentIndex Score
27 records- 0192US5595937AMethod for fabricating semiconductor device with interconnections buried in trenchesNEC CORP·Filed 1996·Granted Jan 21, 1997·140 cites·7 claims
- 0291US7611041B2Semiconductor device, manufacturing method and apparatus for the sameNEC CORP·Filed 2007·Granted Nov 3, 2009·19 cites·17 claims
- 0390US7793818B2Semiconductor device, manufacturing method and apparatus for the sameNEC CORP·Filed 2009·Granted Sep 14, 2010·15 cites·16 claims
- 0490US7282432B2Semiconductor device, manufacturing method and apparatus for the sameNEC CORP·Filed 2005·Granted Oct 16, 2007·16 cites·20 claims
- 0590US5899720AProcess of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junctionNEC CORP·Filed 1995·Granted May 4, 1999·85 cites·8 claims
- 0683US6969915B2Semiconductor device, manufacturing method and apparatus for the sameNEC CORP·Filed 2002·Granted Nov 29, 2005·26 cites·69 claims
- 0781US6232227B1Method for making semiconductor deviceNEC CORP·Filed 2000·Granted May 15, 2001·30 cites·12 claims
- 0875US6566254B1Method for forming a silicide film on gate electrodes and diffusion layers of MOS transistorsNEC ELECTRONICS CORP·Filed 2000·Granted May 20, 2003·21 cites·13 claims
- 0974US7560372B2Process for making a semiconductor device having a roughened surfaceNEC ELECTRONICS CORP·Filed 2006·Granted Jul 14, 2009·5 cites·9 claims
- 1073US5539256ASemiconductor device having an interconnection of a laminate structure and a method for manufacturing the sameNEC CORP·Filed 1995·Granted Jul 23, 1996·42 cites·6 claims
- 1172US6383911B2Semiconductor device and method for making the sameNEC CORP·Filed 2001·Granted May 7, 2002·17 cites·9 claims
- 1271US6153507AMethod of fabricating semiconductor device providing effective resistance against metal layer oxidation and diffusionNEC CORP·Filed 1998·Granted Nov 28, 2000·38 cites·16 claims
- 1370US7170172B2Semiconductor device having a roughened surfaceNEC ELECTRONICS CORP·Filed 2002·Granted Jan 30, 2007·14 cites·16 claims
- 1469US6274923B1Semiconductor device and method for making the sameNEC CORP·Filed 1999·Granted Aug 14, 2001·30 cites·6 claims
- 1567US6413807B1Semiconductor device having silicide films on a gate electrode and a diffusion layer and manufacturing method thereofNEC CORP·Filed 2000·Granted Jul 2, 2002·13 cites·15 claims
- 1656US6107096AMethod of fabricating a salicide-structured MOS semiconductor device having a cobalt disilicied filmNEC CORP·Filed 1996·Granted Aug 22, 2000·21 cites·19 claims
- 1756US5502005AProduction method of semiconductor device having a wiring layer containing goldNEC CORP·Filed 1993·Granted Mar 26, 1996·23 cites·19 claims
- 1855US6284662B1Method of forming a cobalt silicide layer by use of a TEOS through oxide film for ion-implantation processNEC CORP·Filed 1999·Granted Sep 4, 2001·19 cites·36 claims
- 1954US5880505AC49-structured tungsten-containing titanium salicide structureNEC CORP·Filed 1997·Granted Mar 9, 1999·11 cites·23 claims
- 2052US6569766B1Method for forming a silicide of metal with a high melting point in a semiconductor deviceNEC ELECTRONICS CORP·Filed 2000·Granted May 27, 2003·5 cites·12 claims
- 2151US6114765AC49-structured tungsten-containing titanium salicide structure and method of forming the sameNEC CORP·Filed 1998·Granted Sep 5, 2000·9 cites·23 claims
- 2250US6989328B2Method of manufacturing semiconductor device having damascene interconnectionNEC ELECTRONICS CORP·Filed 2004·Granted Jan 24, 2006·2 cites·12 claims
- 2349US6548421B1Method for forming a refractory-metal-silicide layer in a semiconductor deviceNEC CORP·Filed 2000·Granted Apr 15, 2003·4 cites·12 claims
- 2449US6274932B1Semiconductor device having metal interconnection comprising metal silicide and four conductive layersNEC CORP·Filed 1995·Granted Aug 14, 2001·15 cites·14 claims
- 2545US5751067ACompact semiconductor device having excellent electrical characteristics and long time reliabilityNEC CORP·Filed 1995·Granted May 12, 1998·12 cites·2 claims
- 2641US6069045AMethod of forming C49-structure tungsten-containing titanium salicide structureNEC CORP·Filed 1998·Granted May 30, 2000·5 cites·50 claims
- 2737US2003025202A1Semiconductor device having an external electrodeNEC CORP·Filed 2002·Application pending·0 cites
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