Inventor · disambiguated record
Katsuyoshi Mitsui
Also filed as: MITSUI KATSUYOSHI
35 granted patents·2,225 citations·filing 1989–2015
98Inventor score
Files withMITSUBISHI ELECTRIC CORP23RENESAS TECH CORP7OISHI TSUKASA2MITSUBISHI DENKI KABUSHIKI K1MITSUBISHKI DENKI KABUSHIKI KA1
Top patents by PatentIndex Score
35 records- 0198US5174881AApparatus for forming a thin film on surface of semiconductor substrateMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 29, 1992·448 cites·4 claims
- 0297US6297624B1Semiconductor device having an internal voltage generating circuitMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 2, 2001·110 cites·15 claims
- 0397US5407867AMethod of forming a thin film on surface of semiconductor substrateMITSUBISHKI DENKI KABUSHIKI KA·Filed 1992·Granted Apr 18, 1995·380 cites·10 claims
- 0496US5480838AMethod of manufacturing a semiconductor device having vertical transistor with tubular double-gateMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 2, 1996·132 cites·4 claims
- 0596US5382816ASemiconductor device having vertical transistor with tubular double-gateMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 17, 1995·121 cites·14 claims
- 0695US6229753B1Semiconductor memory device capable of accurate control of internally produced power supply potentialMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 8, 2001·120 cites·11 claims
- 0793US5217910AMethod of fabricating semiconductor device having sidewall spacers and oblique implantationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 8, 1993·199 cites·20 claims
- 0893US5146291AMIS device having lightly doped drain structureMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 8, 1992·91 cites·3 claims
- 0991US6201437B1Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element thereforMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 13, 2001·49 cites·20 claims
- 1090US8264294B2Semiconductor device having on-chip oscillator for producing clock signalOISHI TSUKASA·Filed 2011·Granted Sep 11, 2012·10 cites·8 claims
- 1190US6781443B2Potential generating circuit capable of correctly controlling output potentialRENESAS TECH CORP·Filed 2002·Granted Aug 24, 2004·38 cites·11 claims
- 1290US6492863B2Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element thereforMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 10, 2002·38 cites·5 claims
- 1389US6714065B2Semiconductor device including power supply circuit conducting charge pumping operationRENESAS TECH CORP·Filed 2001·Granted Mar 30, 2004·68 cites·10 claims
- 1488US5296401AMIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 22, 1994·79 cites·5 claims
- 1587US5999009ASemiconductor integrated circuit with an internal voltage generating circuit requiring a reduced occupied areaMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 7, 1999·56 cites·18 claims
- 1685US6753720B2Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element thereforRENESAS TECH CORP·Filed 2002·Granted Jun 22, 2004·26 cites·9 claims
- 1783US5183771AMethod of manufacturing lddfet having double sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 2, 1993·50 cites·11 claims
- 1880US5217913AMethod of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 8, 1993·48 cites·4 claims
- 1975US6937088B2Potential generating circuit capable of correctly controlling output potentialRENESAS TECH CORP·Filed 2004·Granted Aug 30, 2005·19 cites·6 claims
- 2073US8963650B2Semiconductor device having on-chip oscillator for producing clock signalOISHI TSUKASA·Filed 2012·Granted Feb 24, 2015·3 cites·12 claims
- 2171US5089865AMis semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Feb 18, 1992·29 cites·5 claims
- 2268US6195298B1Semiconductor integrated circuit capable of rapidly rewriting data into memory cellsMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 27, 2001·14 cites·6 claims
- 2360US5378923ASemiconductor device including a field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 3, 1995·20 cites·3 claims
- 2457US7728678B2Semiconductor device outputting oscillation signalRENESAS TECH CORP·Filed 2008·Granted Jun 1, 2010·3 cites·14 claims
- 2557US6262931B1Semiconductor memory device having voltage down convertor reducing current consumptionMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 17, 2001·10 cites·13 claims
- 2656US6121806ACircuit for adjusting a voltage level in a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Sep 19, 2000·16 cites·18 claims
- 2755US6765432B2Semiconductor device with a low-power operation modeRENESAS TECH CORP·Filed 2003·Granted Jul 20, 2004·9 cites·7 claims
- 2853US6377074B1Semiconductor device having a constant-current source circuitMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 23, 2002·8 cites·9 claims
- 2952US6333880B1Semiconductor memory device capable of detecting high-voltage test command signalMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 25, 2001·7 cites·2 claims
- 3052US6091648AVoltage generating circuit for semiconductor integrated circuit deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 18, 2000·11 cites·2 claims
- 3147US9467090B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Oct 11, 2016·0 cites·9 claims
- 3240US6603695B2Semiconductor memory device having self-refresh modeMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 5, 2003·2 cites·6 claims
- 3337US6320810B1Semiconductor memory device allowing reduction in current consumptionMITSUBISHI DENKI KABUSHIKI K·Filed 2000·Granted Nov 20, 2001·3 cites·10 claims
- 3436US5075240ASemiconductor device manufactured by using conductive ion implantation maskMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Dec 24, 1991·8 cites·10 claims
- 3534US6812748B2Semiconductor device having substrate potential detection circuit less influenced by change in manufacturing conditionsRENESAS TECH CORP·Filed 2002·Granted Nov 2, 2004·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →