Inventor · disambiguated record
Kaoru Mori
Also filed as: MORI KAORU
60 granted patents·7 pending applications·658 citations·filing 1977–2023
98Inventor score
Top patents by PatentIndex Score
67 records- 0194US7583553B2Semiconductor memory and refresh cycle control methodFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Sep 1, 2009·41 cites·17 claims
- 0290US11056207B2Efuse circuit and operation method thereofWINBOND ELECTRONICS CORP·Filed 2020·Granted Jul 6, 2021·3 cites·20 claims
- 0390US6628564B1Semiconductor memory device capable of driving non-selected word lines to first and second potentialsFUJITSU LTD·Filed 1999·Granted Sep 30, 2003·63 cites·24 claims
- 0488US8830735B2Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy filmKARIYADA EIJI·Filed 2011·Granted Sep 9, 2014·10 cites·5 claims
- 0588US8111575B2Semiconductor deviceMORI KAORU·Filed 2010·Granted Feb 7, 2012·14 cites·20 claims
- 0687US6618320B2Semiconductor memory deviceFUJITSU LTD·Filed 2002·Granted Sep 9, 2003·46 cites·5 claims
- 0787US4170582AProcess for preparing a polymer resin aqueous dispersionDAINIPPON INK & CHEMICALS·Filed 1977·Granted Oct 9, 1979·54 cites·12 claims
- 0885US10418075B2Bit line power supply apparatusWINBOND ELECTRONICS CORP·Filed 2019·Granted Sep 17, 2019·4 cites·15 claims
- 0985US7242047B2Magnetic memory adopting synthetic antiferromagnet as free magnetic layerNEC CORP·Filed 2005·Granted Jul 10, 2007·12 cites·19 claims
- 1085US6115316ASemiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower typeFUJITSU LTD·Filed 1999·Granted Sep 5, 2000·51 cites·8 claims
- 1185US4895767ATransparent article and process for preparation thereofTORAY INDUSTRIES·Filed 1988·Granted Jan 23, 1990·61 cites·18 claims
- 1284US9379312B2Magnetoresistive effect element and magnetic random access memory using the sameSUGIBAYASHI TADAHIKO·Filed 2010·Granted Jun 28, 2016·7 cites·9 claims
- 1381US8368175B2Capacitor, semiconductor device having the same, and method of producing themNEC CORP·Filed 2009·Granted Feb 5, 2013·8 cites·16 claims
- 1481US7652941B2Memory deviceFUJITSU MICROELECTRONICS LTD·Filed 2008·Granted Jan 26, 2010·10 cites·18 claims
- 1579US7079443B2Semiconductor deviceFUJITSU LTD·Filed 2003·Granted Jul 18, 2006·18 cites·7 claims
- 1679US6834021B2Semiconductor memory having memory cells requiring refresh operationFUJITSU LTD·Filed 2003·Granted Dec 21, 2004·27 cites·19 claims
- 1779US6262930B1Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower typeFUJITSU LTD·Filed 2000·Granted Jul 17, 2001·24 cites·11 claims
- 1876US10957378B1Control circuit and control method thereof for pseudo static random access memoryWINBOND ELECTRONICS CORP·Filed 2019·Granted Mar 23, 2021·3 cites·13 claims
- 1976US7321517B2Semiconductor memory deviceFUJITSU LTD·Filed 2005·Granted Jan 22, 2008·10 cites·13 claims
- 2076US6236605B1Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifierFUJITSU LTD·Filed 2000·Granted May 22, 2001·23 cites·17 claims
- 2175US7675773B2Semiconductor memory, test method of semiconductor memory and systemFUJITSU MICROELECTRONICS LTD·Filed 2008·Granted Mar 9, 2010·9 cites·19 claims
- 2272US7937630B2Semiconductor memory and method for testing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2007·Granted May 3, 2011·6 cites·6 claims
- 2372US7379370B2Semiconductor memoryFUJITSU LTD·Filed 2006·Granted May 27, 2008·8 cites·20 claims
- 2472US6707730B2Semiconductor memory device with efficient and reliable redundancy processingFUJITSU LTD·Filed 2002·Granted Mar 16, 2004·19 cites·15 claims
- 2571US7286434B2Semiconductor memory device with shift register-based refresh address generation circuitFUJITSU LTD·Filed 2006·Granted Oct 23, 2007·7 cites·10 claims
- 2669US9336890B1Simultaneous programming of many bits in flash memorySPANSION LLC·Filed 2014·Granted May 10, 2016·3 cites·7 claims
- 2768US8385128B2Semiconductor memoryFUJITSU SEMICONDUCTOR LTD·Filed 2011·Granted Feb 26, 2013·3 cites·6 claims
- 2867US7688659B2Semiconductor memory capable of testing a failure before programming a fuse circuit and method thereofFUJITSU MICROELECTRONICS LTD·Filed 2008·Granted Mar 30, 2010·6 cites·17 claims
- 2967US7099208B2Semiconductor memory automatically carrying out refresh operationFUJITSU LTD·Filed 2004·Granted Aug 29, 2006·15 cites·7 claims
- 3067US5733986AResin composition for automobile constant velocity joint boot and molded automobile constant velocity joint bootNOK CORP·Filed 1996·Granted Mar 31, 1998·22 cites·14 claims
- 3166US7187525B2Magnetoresistive device and method for manufacturing sameNEC CORP·Filed 2003·Granted Mar 6, 2007·12 cites·10 claims
- 3262US7706209B2Semiconductor memory device capable of driving non-selected word lines to a variable negative potential based on a bank access operationFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 27, 2010·0 cites·27 claims
- 3362US7362630B2Semiconductor memoryFUJITSU LTD·Filed 2007·Granted Apr 22, 2008·4 cites·10 claims
- 3461US7280029B2Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin filmNEC CORP·Filed 2003·Granted Oct 9, 2007·7 cites·26 claims
- 3561US6791354B2Semiconductor integrated circuitFUJITSU LTD·Filed 2002·Granted Sep 14, 2004·11 cites·16 claims
- 3660US12400695B2Semiconductor memory with adjustment circuit and method for controlling a semiconductor memoryWINBOND ELECTRONICS CORP·Filed 2023·Granted Aug 26, 2025·0 cites·16 claims
- 3759US2010220540A1Semiconductor memory device capable of driving non-selected word lines to first and second potentialsFUJISU MICROELECTRONICS LTD·Filed 2010·Application pending·0 cites
- 3856US11636888B2Memory system and operation method thereofWINBOND ELECTRONICS CORP·Filed 2021·Granted Apr 25, 2023·0 cites·18 claims
- 3955US11367470B2Memory controllerWINBOND ELECTRONICS CORP·Filed 2021·Granted Jun 21, 2022·0 cites·10 claims
- 4054US11842765B2Semiconductor memory device operates asynchronously with external clock signalWINBOND ELECTRONICS CORP·Filed 2021·Granted Dec 12, 2023·0 cites·18 claims
- 4154US6611472B2Memory circuit for preventing rise of cell array power sourceFUJITSU LTD·Filed 2001·Granted Aug 26, 2003·8 cites·7 claims
- 4253US11488652B2Semiconductor memory device to control operating timing based on temperature of the memory deviceWINBOND ELECTRONICS CORP·Filed 2021·Granted Nov 1, 2022·0 cites·6 claims
- 4353US7271698B2Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin filmNEC CORP·Filed 2004·Granted Sep 18, 2007·4 cites·16 claims
- 4452US7196951B2Semiconductor memoryFUJITSU LTD·Filed 2005·Granted Mar 27, 2007·2 cites·4 claims
- 4551US7672181B2Semiconductor memory, test method of semiconductor memory and systemFUJITSU MICROELECTRONICS LTD·Filed 2008·Granted Mar 2, 2010·2 cites·13 claims
- 4651US7394709B2Memory deviceFUJITSU LTD·Filed 2004·Granted Jul 1, 2008·5 cites·20 claims
- 4750US12283309B2Pseudo-static random-access memory and reading method thereofWINBOND ELECTRONICS CORP·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 4850US2014346518A1Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy filmRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 4949US7145825B2Semiconductor memory device with shift register-based refresh address generation circuitFUJITSU LTD·Filed 2004·Granted Dec 5, 2006·5 cites·17 claims
- 5048US2010321983A1Semiconductor memory device capable of driving non-selected word lines to first and second potentialsFUJITSU MICROELECTRONICS LTD·Filed 2010·Application pending·0 cites
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →