Inventor · disambiguated record
Kazuya Nakayama
Also filed as: NAKAYAMA KAZUYA
22 granted patents·2 pending applications·500 citations·filing 1991–2011
96Inventor score
Top patents by PatentIndex Score
24 records- 0195US5554862APower semiconductor deviceTOSHIBA KK·Filed 1994·Granted Sep 10, 1996·135 cites·7 claims
- 0290US7868883B2Electro-optical device and electronic apparatus having the sameSEIKO EPSON CORP·Filed 2006·Granted Jan 11, 2011·10 cites·10 claims
- 0385US5464994AInsulated-gate thyristorTOSHIBA KK·Filed 1994·Granted Nov 7, 1995·45 cites·11 claims
- 0485US5381026AInsulated-gate thyristorTOSHIBA KK·Filed 1991·Granted Jan 10, 1995·46 cites·8 claims
- 0584US6323831B1Electron emitting device and switching circuit using the sameTOSHIBA KK·Filed 1998·Granted Nov 27, 2001·43 cites·24 claims
- 0684US6057636AMicro power switch using a cold cathode and a driving method thereofTOSHIBA KK·Filed 1997·Granted May 2, 2000·42 cites·30 claims
- 0779US6469425B1Electron emission film and field emission cold cathode deviceTOSHIBA KK·Filed 2000·Granted Oct 22, 2002·20 cites·14 claims
- 0878US8422270B2Nonvolatile semiconductor memory deviceKAWABATA SUGURU·Filed 2011·Granted Apr 16, 2013·8 cites·12 claims
- 0976US5793065AInsulated-gate thyristorTOSHIBA KK·Filed 1995·Granted Aug 11, 1998·29 cites·10 claims
- 1074US6236069B1Insulated-gate thyristorTOSHIBA KK·Filed 1998·Granted May 22, 2001·26 cites·6 claims
- 1174US5703383APower semiconductor deviceTOSHIBA KK·Filed 1996·Granted Dec 30, 1997·39 cites·21 claims
- 1272US8008715B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Aug 30, 2011·5 cites·17 claims
- 1368US7341900B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Mar 11, 2008·2 cites·7 claims
- 1464US6040598AHigh-breakdown-voltage semiconductor apparatusTOSHIBA KK·Filed 1998·Granted Mar 21, 2000·18 cites·12 claims
- 1562US7019361B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2005·Granted Mar 28, 2006·2 cites·6 claims
- 1654US5463231AMethod of operating thyristor with insulated gatesTOSHIBA KK·Filed 1994·Granted Oct 31, 1995·13 cites·20 claims
- 1750US7034346B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2003·Granted Apr 25, 2006·2 cites·15 claims
- 1849US5428228AMethod of operating thyristor with insulated gatesTOSHIBA KK·Filed 1993·Granted Jun 27, 1995·11 cites·20 claims
- 1943US6958514B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2003·Granted Oct 25, 2005·1 cites·17 claims
- 2042US2008035992A1Semiconductor deviceTOSHIBA KK·Filed 2007·Application pending·0 cites
- 2139USRE40712EHigh-breakdown-voltage semiconductor apparatusTOSHIBA KK·Filed 2003·Granted May 19, 2009·0 cites·14 claims
- 2239USRE40705EHigh-breakdown-voltage semiconductor apparatusTOSHIBA KK·Filed 2002·Granted May 5, 2009·0 cites·17 claims
- 2338US6297586B1Cold-cathode power switching device of field-emission typeTOSHIBA KK·Filed 1999·Granted Oct 2, 2001·3 cites·13 claims
- 2429US2012014541A1Amplifying device for condenser microphoneNAKAYAMA KAZUYA·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →