Inventor · disambiguated record
Kazuya Nishihori
Also filed as: NISHIHORI KAZUYA
11 granted patents·4 pending applications·153 citations·filing 1991–2024
88Inventor score
Top patents by PatentIndex Score
15 records- 0184US5670808AMetal oxide capacitor with a WNX electrodeTOSHIBA KK·Filed 1996·Granted Sep 23, 1997·50 cites·6 claims
- 0282US11715796B2High frequency transistorTOSHIBA KK·Filed 2021·Granted Aug 1, 2023·1 cites·15 claims
- 0378US6134424AHigh-frequency power amplifier and mobile communication device using sameTOSHIBA KK·Filed 1997·Granted Oct 17, 2000·50 cites·14 claims
- 0477US5929473AMMIC semiconductor device with WNx capacitor electrodeTOSHIBA KK·Filed 1997·Granted Jul 27, 1999·37 cites·8 claims
- 0563US10347655B2Semiconductor switchTOSHIBA KK·Filed 2017·Granted Jul 9, 2019·1 cites·11 claims
- 0661US2025331254A1Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2024·Application pending·0 cites
- 0756US2024321773A1Semiconductor device and high frequency switchTOSHIBA KK·Filed 2023·Application pending·0 cites
- 0856US2024096876A1Semiconductor deviceTOSHIBA KK·Filed 2023·Application pending·0 cites
- 0952US12453122B2Semiconductor device having semiconductor region at bottom of separation trench and connecting two semiconductor regions over which control electrode extendsTOSHIBA KK·Filed 2022·Granted Oct 21, 2025·0 cites·14 claims
- 1052US8674357B2Method for measuring impurity concentration profile, wafer used for same, and method for manufacturing semiconductor device using sameTOSHIBA KK·Filed 2013·Granted Mar 18, 2014·0 cites·8 claims
- 1147US6936870B2Heterojunction type compound semiconductor field effect transistor and its manufacturing methodTOSHIBA KK·Filed 2003·Granted Aug 30, 2005·5 cites·12 claims
- 1244US2012138924A1Method for measuring impurity concentration profile, wafer used for same, and method for manufacturing semiconductor device using sameNISHIHORI KAZUYA·Filed 2011·Application pending·0 cites
- 1339US9768268B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Sep 19, 2017·0 cites·13 claims
- 1434US6114195AManufacturing method of compound semiconductor field effect transistorTOSHIBA KK·Filed 1998·Granted Sep 5, 2000·5 cites·11 claims
- 1532US5273937AMetal semiconductor device and method for producing the sameTOSHIBA KK·Filed 1991·Granted Dec 28, 1993·4 cites·34 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →