Inventor · disambiguated record
Kaan Oguz
Also filed as: OGUZ KAAN
99 granted patents·25 pending applications·251 citations·filing 2011–2024
99Inventor score
Top patents by PatentIndex Score
124 records- 0198US9472748B2Balancing energy barrier between states in perpendicular magnetic tunnel junctionsINTEL CORP·Filed 2016·Granted Oct 18, 2016·77 cites·20 claims
- 0297US12009018B2Transition metal dichalcogenide based spin orbit torque memory deviceINTEL CORP·Filed 2022·Granted Jun 11, 2024·2 cites·19 claims
- 0395US8796797B2Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form sameDOYLE BRIAN S·Filed 2012·Granted Aug 5, 2014·17 cites·30 claims
- 0494US8836056B2Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layerOGUZ KAAN·Filed 2012·Granted Sep 16, 2014·18 cites·15 claims
- 0592US11062752B2Spin orbit torque memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Jul 13, 2021·5 cites·8 claims
- 0692US10340445B2PSTTM device with bottom electrode interface materialINTEL CORP·Filed 2015·Granted Jul 2, 2019·5 cites·16 claims
- 0792US9882121B2Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layerINTEL CORP·Filed 2014·Granted Jan 30, 2018·7 cites·22 claims
- 0892US8786040B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameDOYLE BRIAN S·Filed 2012·Granted Jul 22, 2014·12 cites·28 claims
- 0987US11276730B2Spin orbit torque memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Mar 15, 2022·3 cites·17 claims
- 1086US11393515B2Transition metal dichalcogenide based spin orbit torque memory deviceINTEL CORP·Filed 2018·Granted Jul 19, 2022·2 cites·20 claims
- 1186US11367749B2Spin orbit torque (SOT) memory devices and their methods of fabricationINTEL CORP·Filed 2018·Granted Jun 21, 2022·3 cites·14 claims
- 1286US11245068B2Transition metal dichalcogenide based magnetoelectric memory deviceINTEL CORP·Filed 2018·Granted Feb 8, 2022·2 cites·20 claims
- 1386US9735348B2High stability spintronic memoryINTEL CORP·Filed 2015·Granted Aug 15, 2017·2 cites·19 claims
- 1485US12495559B2Capacitor with dual dielectric layersINTEL CORP·Filed 2021·Granted Dec 9, 2025·1 cites·14 claims
- 1585US11264558B2Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropyINTEL CORP·Filed 2018·Granted Mar 1, 2022·2 cites·23 claims
- 1685US10326075B2PSTTM device with multi-layered filter stackINTEL CORP·Filed 2015·Granted Jun 18, 2019·2 cites·20 claims
- 1785US9054302B2Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form sameDOYLE BRIAN S·Filed 2014·Granted Jun 9, 2015·6 cites·5 claims
- 1884US9548441B2Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layerINTEL CORP·Filed 2015·Granted Jan 17, 2017·2 cites·11 claims
- 1984US8980650B2Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layerOGUZ KAAN·Filed 2014·Granted Mar 17, 2015·5 cites·5 claims
- 2083US11574666B2Spin orbit torque memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Feb 7, 2023·2 cites·19 claims
- 2183US10158065B2Spin-transfer torque memory (STTM) devices having magnetic contactsINTEL CORP·Filed 2014·Granted Dec 18, 2018·6 cites·24 claims
- 2282US11417830B2Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memoryINTEL CORP·Filed 2018·Granted Aug 16, 2022·5 cites·12 claims
- 2382US11386951B2Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domainsINTEL CORP·Filed 2018·Granted Jul 12, 2022·2 cites·18 claims
- 2482US11374164B2Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memoryINTEL CORP·Filed 2018·Granted Jun 28, 2022·3 cites·21 claims
- 2582US11251365B2High blocking temperature spin orbit torque electrodeINTEL CORP·Filed 2018·Granted Feb 15, 2022·2 cites·17 claims
- 2681US11227644B2Self-aligned spin orbit torque (SOT) memory devices and their methods of fabricationINTEL CORP·Filed 2018·Granted Jan 18, 2022·5 cites·19 claims
- 2781US10832847B2Low stray field magnetic memoryINTEL CORP·Filed 2015·Granted Nov 10, 2020·2 cites·25 claims
- 2881US10411068B2Electrical contacts for magnetoresistive random access memory devicesINTEL CORP·Filed 2015·Granted Sep 10, 2019·3 cites·25 claims
- 2980US10937807B2Ferroelectric field-effect transistor devices having a top gate and a bottom gateINTEL CORP·Filed 2016·Granted Mar 2, 2021·3 cites·20 claims
- 3080US9496486B2Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form sameINTEL CORP·Filed 2015·Granted Nov 15, 2016·4 cites·18 claims
- 3180US9231194B2High stability spintronic memoryINTEL CORP·Filed 2013·Granted Jan 5, 2016·3 cites·20 claims
- 3279US10832749B2Perpendicular magnetic memory with symmetric fixed layersINTEL CORP·Filed 2015·Granted Nov 10, 2020·5 cites·25 claims
- 3377US11557629B2Spin orbit memory devices with reduced magnetic moment and methods of fabricationINTEL CORP·Filed 2019·Granted Jan 17, 2023·2 cites·19 claims
- 3477US11462678B2Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the sameINTEL CORP·Filed 2018·Granted Oct 4, 2022·2 cites·17 claims
- 3577US9779794B2Techniques for forming spin-transfer torque memory (STTM) elements having annular contactsINTEL CORP·Filed 2014·Granted Oct 3, 2017·5 cites·25 claims
- 3676US10541014B2Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the sameDOYLE BRIAN S·Filed 2015·Granted Jan 21, 2020·4 cites·21 claims
- 3775US10516109B2Resistive memory cells and precursors thereof, methods of making the same, and devices including the sameMUKHERJEE NILOY·Filed 2014·Granted Dec 24, 2019·2 cites·24 claims
- 3874US10559744B2Texture breaking layer to decouple bottom electrode from PMTJ deviceINTEL CORP·Filed 2016·Granted Feb 11, 2020·2 cites·17 claims
- 3973US11818963B2Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropyINTEL CORP·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 4073US11696514B2Transition metal dichalcogenide based magnetoelectric memory deviceINTEL CORP·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
- 4172US10580973B2Spin-transfer torque memory (STTM) devices having magnetic contactsINTEL CORP·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 4268US11476412B2Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memoryINTEL CORP·Filed 2018·Granted Oct 18, 2022·2 cites·20 claims
- 4368US10950660B2Perpendicular STTM free layer including protective capINTEL CORP·Filed 2016·Granted Mar 16, 2021·1 cites·26 claims
- 4468US10418415B2Interconnect capping process for integration of MRAM devices and the resulting structuresINTEL CORP·Filed 2016·Granted Sep 17, 2019·1 cites·24 claims
- 4566US11404630B2Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form sameINTEL CORP·Filed 2016·Granted Aug 2, 2022·2 cites·17 claims
- 4666US10522739B2Perpendicular magnetic memory with reduced switching currentINTEL CORP·Filed 2015·Granted Dec 31, 2019·1 cites·18 claims
- 4765US10340443B2Perpendicular magnetic memory with filament conduction pathINTEL CORP·Filed 2015·Granted Jul 2, 2019·1 cites·26 claims
- 4864US12501628B2Memory comprising conductive ferroelectric material in series with dielectric materialINTEL CORP·Filed 2021·Granted Dec 16, 2025·0 cites·20 claims
- 4964US11502188B2Apparatus and method for boosting signal in magnetoelectric spin orbit logicINTEL CORP·Filed 2018·Granted Nov 15, 2022·0 cites·20 claims
- 5064US10847714B2PSTTM device with multi-layered filter stackINTEL CORP·Filed 2019·Granted Nov 24, 2020·0 cites·20 claims
Showing the top 50 of 124 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Kaan Oguz files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →