Inventor · disambiguated record
Kazuaki Ohmi
Also filed as: OHMI KAZUAKI
37 granted patents·6 pending applications·1,601 citations·filing 1980–2006
98Inventor score
Top patents by PatentIndex Score
43 records- 0197US6624047B1Substrate and method of manufacturing the sameCANON KK·Filed 2000·Granted Sep 23, 2003·150 cites·64 claims
- 0296US6468923B1Method of producing semiconductor memberCANON KK·Filed 2000·Granted Oct 22, 2002·144 cites·41 claims
- 0394US6376332B1Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing methodCANON KK·Filed 2000·Granted Apr 23, 2002·93 cites·56 claims
- 0493US6426270B1Substrate processing method and method of manufacturing semiconductor substrateCANON KK·Filed 2000·Granted Jul 30, 2002·82 cites·39 claims
- 0593US6382292B1Method and apparatus for separating composite member using fluidCANON KK·Filed 1998·Granted May 7, 2002·97 cites·20 claims
- 0691US6342433B1Composite member its separation method and preparation method of semiconductor substrate by utilization thereofCANON KK·Filed 1999·Granted Jan 29, 2002·96 cites·57 claims
- 0790US6746559B2Method and apparatus for separating composite member using fluidCANON KK·Filed 2002·Granted Jun 8, 2004·33 cites·13 claims
- 0890US6605518B1Method of separating composite member and process for producing thin filmCANON KK·Filed 2000·Granted Aug 12, 2003·63 cites·2 claims
- 0990US6475323B1Method and apparatus for separating composite member using fluidCANON KK·Filed 2000·Granted Nov 5, 2002·33 cites·24 claims
- 1088US6672358B2Sample processing systemCANON KK·Filed 2002·Granted Jan 6, 2004·33 cites·40 claims
- 1188US6597039B2Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereofCANON KK·Filed 2001·Granted Jul 22, 2003·35 cites·2 claims
- 1288US6391743B1Method and apparatus for producing photoelectric conversion deviceCANON KK·Filed 1999·Granted May 21, 2002·88 cites·7 claims
- 1385US6656271B2Method of manufacturing semiconductor wafer method of using and utilizing the sameCANON KK·Filed 1999·Granted Dec 2, 2003·74 cites·37 claims
- 1484US6140209AProcess for forming an SOI substrateCANON KK·Filed 1998·Granted Oct 31, 2000·69 cites·51 claims
- 1584US5563092AMethod of producing a substrate for an amorphous semiconductorCANON KK·Filed 1994·Granted Oct 8, 1996·86 cites·31 claims
- 1684US4931692ALuminescing member, process for preparation thereof, and electroluminescent device employing sameCANON KK·Filed 1988·Granted Jun 5, 1990·38 cites·49 claims
- 1783US6653205B2Composite member separating method, thin film manufacturing method, and composite member separating apparatusCANON KK·Filed 2000·Granted Nov 25, 2003·35 cites·47 claims
- 1877US6653206B2Method and apparatus for processing composite memberCANON KK·Filed 2001·Granted Nov 25, 2003·21 cites·54 claims
- 1976US6900114B2Separating apparatus, separating method, and method of manufacturing semiconductor substrateCANON KK·Filed 2003·Granted May 31, 2005·20 cites·2 claims
- 2074US6979629B2Method and apparatus for processing composite memberCANON KK·Filed 2003·Granted Dec 27, 2005·18 cites·11 claims
- 2173US6527031B1Sample separating apparatus and method, and substrate manufacturing methodCANON KK·Filed 1999·Granted Mar 4, 2003·31 cites·67 claims
- 2273US5776255AChemical vapor deposition apparatusCANON KK·Filed 1996·Granted Jul 7, 1998·43 cites·7 claims
- 2372US6127692APhotoelectric conversion apparatusCANON KK·Filed 1993·Granted Oct 3, 2000·32 cites·13 claims
- 2468US5723877APhotoelectric conversion apparatusCANON KK·Filed 1995·Granted Mar 3, 1998·31 cites·22 claims
- 2563US7579257B2Sample separating apparatus and method, and substrate manufacturing methodCANON KABUHSIKI KAISHA·Filed 2004·Granted Aug 25, 2009·6 cites·21 claims
- 2662US6629539B1Sample processing systemCANON KK·Filed 1999·Granted Oct 7, 2003·25 cites·32 claims
- 2762US6609446B1Separating apparatus, separating method, and method of manufacturing semiconductor substrateCANON KK·Filed 2000·Granted Aug 26, 2003·9 cites·17 claims
- 2862US5500102AMethod of forming deposited semiconductor filmCANON KK·Filed 1994·Granted Mar 19, 1996·32 cites·4 claims
- 2961US8035668B2Exposure apparatus and device manufacturing methodCANON KK·Filed 2006·Granted Oct 11, 2011·1 cites·14 claims
- 3061US7077901B2Process for producing single crystal silicon wafersCANON KK·Filed 2003·Granted Jul 18, 2006·4 cites·10 claims
- 3161US6971432B2Sample processing systemCANON KK·Filed 2003·Granted Dec 6, 2005·5 cites·6 claims
- 3260US5154949AProcess for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydrideCANON KK·Filed 1992·Granted Oct 13, 1992·27 cites·48 claims
- 3350US2005236114A1Sample processing systemCANON KK·Filed 2005·Application pending·0 cites
- 3448US5182253APurification apparatus for superconductor fine particlesCANON KK·Filed 1991·Granted Jan 26, 1993·12 cites·48 claims
- 3546US4315980AElectrophotographic member with metallocene containing overlayerFUJI XEROX CO LTD·Filed 1980·Granted Feb 16, 1982·6 cites·10 claims
- 3645US5723034AProcess for forming hydrogenated amorphous silicon filmCANON KK·Filed 1996·Granted Mar 3, 1998·10 cites·7 claims
- 3745US2004171233A1Method and apparatus for separating composite member using fluidCANON KK·Filed 2004·Application pending·0 cites
- 3842US2003116275A1Sample separating apparatus and method, and substrate manufacturing methodFiled 2002·Application pending·0 cites
- 3942US2002088558A1Method and apparatus for separating composite member using fluidFiled 2002·Application pending·0 cites
- 4041US6025243AMethod for preparing a semiconductor deviceCANON KK·Filed 1994·Granted Feb 15, 2000·11 cites·1 claims
- 4138US5134092AProcess for forming deposited film and process for producing semiconductor deviceCANON KK·Filed 1990·Granted Jul 28, 1992·8 cites·9 claims
- 4238US2002081822A1Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing methodFiled 2002·Application pending·0 cites
- 4330US2003190794A1Semiconductor substrate and process for producing the same using a composite member having porous layers and varying thickness and porosityFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →