Inventor · disambiguated record
Kazunobu Ohta
Also filed as: OHTA KAZUNOBU
19 granted patents·4 pending applications·293 citations·filing 1999–2024
96Inventor score
Files withRENESAS ELECTRONICS CORP12RENESAS TECH CORP8MITSUBISHI ELECTRIC CORP1OHTA KAZUNOBU1SANUKI TOMOYA1
Top patents by PatentIndex Score
23 records- 0196US7470618B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Dec 30, 2008·29 cites·12 claims
- 0296US7183204B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Feb 27, 2007·24 cites·12 claims
- 0395US6906393B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jun 14, 2005·56 cites·6 claims
- 0494US7960281B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Jun 14, 2011·15 cites·10 claims
- 0593US8372747B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2011·Granted Feb 12, 2013·8 cites·17 claims
- 0693US2025098281A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0792US8809186B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 19, 2014·6 cites·5 claims
- 0892US8586475B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 19, 2013·7 cites·10 claims
- 0991US9209191B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 8, 2015·5 cites·6 claims
- 1091US6740939B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted May 25, 2004·61 cites·4 claims
- 1190US9614081B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Apr 4, 2017·3 cites·7 claims
- 1290US9412867B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 9, 2016·3 cites·6 claims
- 1380US6872642B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Mar 29, 2005·23 cites·14 claims
- 1479US12198987B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2021·Granted Jan 14, 2025·0 cites·12 claims
- 1575US2020227557A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Application pending·0 cites
- 1674US6333222B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 25, 2001·31 cites·12 claims
- 1766US2018069119A1Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 1865US9847417B2Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 19, 2017·0 cites·4 claims
- 1964US6869865B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Mar 22, 2005·9 cites·19 claims
- 2063US6835610B2Method of manufacturing semiconductor device having gate electrode with expanded upper portionRENESAS TECH CORP·Filed 2003·Granted Dec 28, 2004·8 cites·11 claims
- 2161US8952315B2Solid-state imaging device having a vertical transistor with a dual polysilicon gateOHTA KAZUNOBU·Filed 2009·Granted Feb 10, 2015·3 cites·7 claims
- 2244US6864128B2Manufacturing method for a semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Mar 8, 2005·2 cites·5 claims
- 2342US2009095992A1Semiconductor device including mos field effect transistor and method for manufacturing the semiconductor deviceSANUKI TOMOYA·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →