Inventor · disambiguated record
Kakeru Otsuka
Also filed as: OTSUKA KAKERU
8 granted patents·10 pending applications·3 citations·filing 2020–2025
73Inventor score
Files withMITSUBISHI ELECTRIC CORP18
Top patents by PatentIndex Score
18 records- 0188US11276773B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Mar 15, 2022·2 cites·9 claims
- 0278US11495678B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Nov 8, 2022·1 cites·8 claims
- 0366US2023369477A1Manufacturing method for semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 0459US11799022B2Semiconductor device comprising a buffer layer including a complex defect of interstice carbon and interstice oxygenMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Oct 24, 2023·0 cites·11 claims
- 0558US12500023B2Control system for semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2024·Granted Dec 16, 2025·0 cites·12 claims
- 0656US2025357361A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 0756US2025120168A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 0854US2025089307A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 0953US2023187501A1Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Application pending·0 cites
- 1050US2025359100A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2025·Application pending·0 cites
- 1149US2025357363A1Semiconductor device and electric power conversion deviceMITSUBISHI ELECTRIC CORP·Filed 2025·Application pending·0 cites
- 1249US2025374572A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2025·Application pending·0 cites
- 1348US2024395806A1Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 1447US12507427B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Dec 23, 2025·0 cites·12 claims
- 1545US12159944B2RC-IGBT with lifetime control layerMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Dec 3, 2024·0 cites·3 claims
- 1643US11908954B2Semiconductor device with insulated gate bipolar transistor region and diode region provided on semiconductor substrate and adjacent to each otherMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Feb 20, 2024·0 cites·10 claims
- 1742US2025362183A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2025·Application pending·0 cites
- 1840US11495663B2Semiconductor device including insulated gate bipolar transistor, diode, and current sense regionsMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Nov 8, 2022·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →