Inventor · disambiguated record
Kazutaka Otsuki
Also filed as: OTSUKI KAZUTAKA
15 granted patents·1 pending application·135 citations·filing 1994–2013
93Inventor score
Files withNEC CORP8NEC ELECTRONICS CORP5MIYAWAKI YUKIHIRO1NIPPON CATALYTIC CHEM IND1OTSUKI KAZUTAKA1
Top patents by PatentIndex Score
16 records- 0185US7642625B2Method of evaluating thermal stress resistance of semiconductor device, and semiconductor wafer having test elementNEC ELECTRONICS CORP·Filed 2008·Granted Jan 5, 2010·13 cites·6 claims
- 0285US7569887B2C-shaped dummy gate electrode semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2005·Granted Aug 4, 2009·13 cites·5 claims
- 0380US8562850B2Emulsion for vibration damping materialsMIYAWAKI YUKIHIRO·Filed 2008·Granted Oct 22, 2013·8 cites·24 claims
- 0473US5625586ASemiconductor memory having a plurality of memory banks and sub-bit lines which are connected to a main bit line via MOS transistors whose gates are commonly connected to a selection lineNEC CORP·Filed 1996·Granted Apr 29, 1997·35 cites·11 claims
- 0569US9212094B2Polycarboxylic copolymer, cement dispersion agent, cement admixture, and cement compositionNIPPON CATALYTIC CHEM IND·Filed 2013·Granted Dec 15, 2015·2 cites·10 claims
- 0661US6436772B2Method of manufacturing semiconductor device having memory cell transistorsNEC CORP·Filed 2001·Granted Aug 20, 2002·8 cites·15 claims
- 0759US8441076B2SramOTSUKI KAZUTAKA·Filed 2011·Granted May 14, 2013·2 cites·7 claims
- 0858US7279376B2Method for manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2004·Granted Oct 9, 2007·8 cites·20 claims
- 0955US5545911ASemiconductor device having mosfets formed in inherent and well regions of a semiconductor substrateNEC CORP·Filed 1994·Granted Aug 13, 1996·16 cites·9 claims
- 1051US6180463B1Method for fabricating a multi-level mask ROMNEC CORP·Filed 1998·Granted Jan 30, 2001·11 cites·15 claims
- 1150US6417568B1Semiconductor deviceNEC CORP·Filed 2000·Granted Jul 9, 2002·4 cites·4 claims
- 1248US6583492B2Capacitor element having a contact hole structure in an electrode structureNEC ELECTRONICS CORP·Filed 2002·Granted Jun 24, 2003·3 cites·6 claims
- 1342US2007090526A1Semiconductor device that attains a high integrationNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 1441US6204540B1Memory cell structure of a mask programmable read only memory with ion-implantation stopper filmsNEC CORP·Filed 1999·Granted Mar 20, 2001·6 cites·24 claims
- 1534US6177693B1Semiconductor deviceNEC CORP·Filed 1998·Granted Jan 23, 2001·3 cites·8 claims
- 1634US5593904AMethod for manufacturing NAND type semiconductor memory deviceNEC CORP·Filed 1995·Granted Jan 14, 1997·3 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →