Inventor · disambiguated record
Karthik Sarpatwari
Also filed as: SARPATWARI KARTHIK
79 granted patents·24 pending applications·162 citations·filing 2011–2025
98Inventor score
Top patents by PatentIndex Score
103 records- 0198US11476252B2Memory device having 2-transistor vertical memory cell and shared channel regionMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 18, 2022·7 cites·20 claims
- 0298US11367484B1Multi-step pre-read for write operations in memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 21, 2022·12 cites·20 claims
- 0398US11335684B2Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2020·Granted May 17, 2022·9 cites·30 claims
- 0498US11295822B2Multi-state programming of memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 5, 2022·15 cites·30 claims
- 0598US11139034B1Data-based polarity write operationsMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 5, 2021·11 cites·25 claims
- 0698US11139016B1Read refresh operationMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 5, 2021·8 cites·25 claims
- 0797US12266660B2Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2023·Granted Apr 1, 2025·3 cites·20 claims
- 0897US11615854B2Identify the programming mode of memory cells during reading of the memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 28, 2023·7 cites·18 claims
- 0997US11616073B1Memory device having 2-transistor vertical memory cell and wrapped data line structureMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 28, 2023·3 cites·17 claims
- 1096US11871589B2Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
- 1196US11514983B2Identify the programming mode of memory cells based on cell statistics obtained during reading of the memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 29, 2022·5 cites·20 claims
- 1296US11404130B1Evaluation of background leakage to select write voltage in memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 2, 2022·5 cites·20 claims
- 1395US11778806B2Memory device having 2-transistor vertical memory cell and separate read and write gatesMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 3, 2023·2 cites·18 claims
- 1495US11688450B2Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 27, 2023·3 cites·10 claims
- 1594US12080331B2Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 3, 2024·2 cites·10 claims
- 1694US11950426B2Memory device having 2-transistor vertical memory cell and wrapped data line structureMICRON TECHNOLOGY INC·Filed 2023·Granted Apr 2, 2024·1 cites·20 claims
- 1794US11664073B2Adaptively programming memory cells in different modes to optimize performanceMICRON TECHNOLOGY INC·Filed 2021·Granted May 30, 2023·3 cites·17 claims
- 1893US11475970B1Bipolar read retryMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 18, 2022·3 cites·15 claims
- 1991US12080359B2Identify the programming mode of memory cells during reading of the memory cellsMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 3, 2024·1 cites·19 claims
- 2091US11653489B2Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2020·Granted May 16, 2023·2 cites·22 claims
- 2190US11776907B2Memory device having 2-transistor vertical memory cell and a common plateMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 3, 2023·2 cites·20 claims
- 2290US11665880B2Memory device having 2-transistor vertical memory cell and a common plateMICRON TECHNOLOGY INC·Filed 2020·Granted May 30, 2023·2 cites·12 claims
- 2390US11355209B2Accessing a multi-level memory cellMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 7, 2022·3 cites·35 claims
- 2490US11296094B2Memory device having shared access line for 2-transistor vertical memory cellMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 5, 2022·4 cites·15 claims
- 2590US10964385B1Restoring memory cell threshold voltagesMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 30, 2021·9 cites·24 claims
- 2687US12106803B2Multi-step pre-read for write operations in memory devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 1, 2024·1 cites·17 claims
- 2787US11985806B2Vertical 2-transistor memory cellMICRON TECHNOLOGY INC·Filed 2019·Granted May 14, 2024·3 cites·35 claims
- 2887US10867671B1Techniques for applying multiple voltage pulses to select a memory cellMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 15, 2020·7 cites·24 claims
- 2985US12101946B2Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 3085US2025342865A1Memory device having shared read/write data line for 2-transistor vertical memory cellMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3185US2024414911A1Memory device having shared access line for 2-transistor vertical memory cellMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3285US2025294884A1Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3385US2024420750A1Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3485US2025331156A1Memory device having 2-transistor vertical memory cell and shared channel regionMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3584US2024413154A1Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3683US11875867B2Weighted wear leveling for improving uniformityMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 16, 2024·1 cites·20 claims
- 3783US10680175B1Memory structures having improved write enduranceINTEL CORP·Filed 2018·Granted Jun 9, 2020·3 cites·27 claims
- 3882US11043260B2Single word line gain cell with complementary read write channelMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 22, 2021·2 cites·24 claims
- 3982US8638607B2Disturb verify for programming memory cellsSARPATWARI KARTHIK·Filed 2011·Granted Jan 28, 2014·7 cites·15 claims
- 4081US11527287B1Drift aware read operationsMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 13, 2022·1 cites·20 claims
- 4180US11694747B2Self-selecting memory cells configured to store more than one bit per memory cellMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 4, 2023·1 cites·19 claims
- 4278US2024251563A1Memory device having 2-transistor vertical memory cell and wrapped data line structureMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4377US12069853B2Memory device having shared access line for 2-transistor vertical memory cellMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 4477US11950402B2Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2023·Granted Apr 2, 2024·0 cites·20 claims
- 4577US11664074B2Programming intermediate state to store data in self-selecting memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted May 30, 2023·1 cites·18 claims
- 4677US11417381B2Memory device having shared read/write access line for 2-transistor vertical memory cellMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 16, 2022·1 cites·19 claims
- 4777US9165658B2Disturb verify for programming memory cellsMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 20, 2015·4 cites·20 claims
- 4877US2024251543A1Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4977US2024233797A1Memory device having shared read/write access line for 2-transistor vertical memory cellMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 5076US11195998B2Memory structures having improved write enduranceINTEL CORP·Filed 2020·Granted Dec 7, 2021·1 cites·18 claims
Showing the top 50 of 103 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →