Inventor · disambiguated record
Katsumi Satoh
Also filed as: SATOH KATSUMI
37 granted patents·1 pending application·304 citations·filing 1982–2022
97Inventor score
Files withMITSUBISHI ELECTRIC CORP33KYUSHU INST TECH1MITSUI SHIPBUILDING ENG1SUMITOMO METAL IND1TOKYO KIKAI SEISAKUSHO LTD1
Top patents by PatentIndex Score
38 records- 0183US11031491B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Jun 8, 2021·3 cites·23 claims
- 0279US11183588B2Semiconductor device and inverterMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Nov 23, 2021·1 cites·11 claims
- 0378US10720918B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Jul 21, 2020·2 cites·17 claims
- 0478US4455148AMethod for de-ashing and transportation of coalMITSUI SHIPBUILDING ENG·Filed 1982·Granted Jun 19, 1984·30 cites·14 claims
- 0577US6832549B2Rotary printing press having printing units each having printing devices arranged vertically in layersTOKYO KIKAI SEISAKUSHO LTD·Filed 2003·Granted Dec 21, 2004·8 cites·2 claims
- 0672US6670687B2Semiconductor device having silicon carbide layer of predetermined conductivity type and module device having the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 30, 2003·21 cites·8 claims
- 0772US6649995B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 18, 2003·20 cites·7 claims
- 0871US6570193B1Reverse conducting thyristor device, pressure-connection type semiconductor device and semiconductor substrateMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 27, 2003·19 cites·8 claims
- 0970US12316245B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Granted May 27, 2025·0 cites·22 claims
- 1069US6552413B1DiodeMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 22, 2003·16 cites·8 claims
- 1164US6472692B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 29, 2002·12 cites·11 claims
- 1262US5543363AProcess for adhesively attaching a semiconductor device to an electrode plateMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 6, 1996·28 cites·3 claims
- 1361US6670688B2Semiconductor device including at least one schottky metal layer surrounding PN junctionMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 30, 2003·9 cites·6 claims
- 1461US6614087B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 2, 2003·10 cites·12 claims
- 1559US6303987B1Compression bonded type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 16, 2001·11 cites·28 claims
- 1657US5371386ASemiconductor device and method of assembling the sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 6, 1994·22 cites·19 claims
- 1754US6388306B1Semiconductor device with rapid reverse recovery characteristicMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 14, 2002·7 cites·9 claims
- 1853US12457800B2Semiconductor device, power conversion apparatus, and method for driving semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Granted Oct 28, 2025·0 cites·13 claims
- 1951US5066384AProcess for refining coal-derived heavy carbonaceous materialsSUMITOMO METAL IND·Filed 1988·Granted Nov 19, 1991·9 cites·14 claims
- 2050US11309386B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Apr 19, 2022·0 cites·14 claims
- 2150US7012332B2Semiconductor device having sealing structure for wide gap type semiconductor chipMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Mar 14, 2006·6 cites·7 claims
- 2249US11489066B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Nov 1, 2022·0 cites·7 claims
- 2349US6521919B2Semiconductor device of reduced thermal resistance and increased operating areaMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 18, 2003·4 cites·8 claims
- 2447US12477763B2Semiconductor deviceUNIV TOKYO·Filed 2021·Granted Nov 18, 2025·0 cites·7 claims
- 2547US6657239B1Power-switching semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 2, 2003·11 cites·1 claims
- 2646US6489666B1Semiconductor device with improved heat suppression in peripheral regionsMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 3, 2002·3 cites·5 claims
- 2746US6479882B2Current-limiting deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 12, 2002·3 cites·13 claims
- 2846US6388276B1Reverse conducting thyristorMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 14, 2002·3 cites·9 claims
- 2942US6521918B2Semiconductor device and driving method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 18, 2003·1 cites·8 claims
- 3041US6323547B1Pressure contact type semiconductor device with ringshaped gate terminalMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 27, 2001·11 cites·17 claims
- 3141US5742716ALight trigger thyristorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 21, 1998·10 cites·16 claims
- 3240US6218683B1DiodeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 17, 2001·7 cites·17 claims
- 3339US10840365B2Insulated gate bipolar transistor device, manufacturing method for semiconductor device, and manufacturing method for insulated gate bipolar transistor deviceKYUSHU INST TECH·Filed 2017·Granted Nov 17, 2020·0 cites·29 claims
- 3439US5637886AThyristor with improved dv/dt resistanceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 10, 1997·9 cites·32 claims
- 3536US5804841AOptical trigger thyristor and fabrication methodMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 8, 1998·6 cites·16 claims
- 3634US6696702B2Silicon carbide semiconductor switching deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Feb 24, 2004·0 cites·4 claims
- 3732US2003030058A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 3830US5189509ASemiconductor device and electrode block for the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Feb 23, 1993·2 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →