Inventor · disambiguated record
Kazuyuki Sawada
Also filed as: SAWADA KAZUYUKI
13 granted patents·5 pending applications·519 citations·filing 1989–2012
92Inventor score
Top patents by PatentIndex Score
18 records- 0197US5989998AMethod of forming interlayer insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Nov 23, 1999·254 cites·8 claims
- 0293US6558756B2Method of forming interlayer insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 6, 2003·42 cites·4 claims
- 0393US4977104AMethod for producing a semiconductor device by filling hollows with thermally decomposed doped and undoped polysiliconMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Dec 11, 1990·97 cites·2 claims
- 0492US7060323B2Method of forming interlayer insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 13, 2006·38 cites·2 claims
- 0582US7473929B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Jan 6, 2009·23 cites·13 claims
- 0677US9018699B2Silicon carbide semiconductor element and method for fabricating the sameKIYOSAWA TSUTOMU·Filed 2012·Granted Apr 28, 2015·6 cites·13 claims
- 0765US6416609B1Process and apparatus of producing optical disk and process of producing substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Jul 9, 2002·16 cites·3 claims
- 0865US5174858AMethod of forming contact structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Dec 29, 1992·39 cites·12 claims
- 0963US7846828B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Dec 7, 2010·1 cites·5 claims
- 1061US7759711B2Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Jul 20, 2010·2 cites·12 claims
- 1160US7851871B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Dec 14, 2010·1 cites·2 claims
- 1246US6835270B2Process and apparatus of producing optical disk and process of producing substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Dec 28, 2004·0 cites·5 claims
- 1342US2006284283A1Semiconductor device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 1441US7301179B2Semiconductor device having a high breakdown voltage transistor formed thereonMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Nov 27, 2007·0 cites·6 claims
- 1541US2010001315A1Semiconductor deviceOKITA MASAAKI·Filed 2009·Application pending·0 cites
- 1640US2001051228A1Method of forming interlayer insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Application pending·0 cites
- 1736US2011006339A1Semiconductor device and method of manufacturing the samePANASONIC CORP·Filed 2010·Application pending·0 cites
- 1835US2010264493A1Semiconductor device and manufacturing method thereofPANASONIC CORP·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →