Inventor · disambiguated record
Katsuyuki Sekine
Also filed as: SEKINE KATSUYUKI
87 granted patents·36 pending applications·570 citations·filing 1986–2017
99Inventor score
Top patents by PatentIndex Score
123 records- 0198US8299571B2Resistance-change memory cell arrayOZAWA YOSHIO·Filed 2010·Granted Oct 30, 2012·52 cites·20 claims
- 0297US9166032B1Non-volatile memory deviceTOSHIBA KK·Filed 2014·Granted Oct 20, 2015·36 cites·20 claims
- 0396US7999304B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Aug 16, 2011·52 cites·8 claims
- 0494US9431412B1Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Aug 30, 2016·14 cites·17 claims
- 0592US9847342B2Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2016·Granted Dec 19, 2017·10 cites·9 claims
- 0692US9324729B2Non-volatile memory device having a multilayer block insulating film to suppress gate leakage currentTOSHIBA KK·Filed 2014·Granted Apr 26, 2016·8 cites·16 claims
- 0792US8829593B2Semiconductor memory device having three-dimensionally arranged memory cells, and manufacturing method thereofSEKINE KATSUYUKI·Filed 2010·Granted Sep 9, 2014·20 cites·10 claims
- 0892US7807990B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Oct 5, 2010·22 cites·20 claims
- 0991US8110865B2Semiconductor device and method for manufacturing the sameTANAKA MASAYUKI·Filed 2010·Granted Feb 7, 2012·12 cites·5 claims
- 1091US7012311B2Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereofTOKYO ELECTRON LTD·Filed 2001·Granted Mar 14, 2006·45 cites·14 claims
- 1190US9761605B1Semiconductor memory deviceTOSHIBA KK·Filed 2016·Granted Sep 12, 2017·7 cites·20 claims
- 1289US8373222B2Nonvolatile semiconductor memory device with alternately stacked isolation dielectric films and electrode filmsTOSHIBA KK·Filed 2009·Granted Feb 12, 2013·16 cites·8 claims
- 1388US9754954B2Non-volatile memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Sep 5, 2017·4 cites·12 claims
- 1488US7964489B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Jun 21, 2011·13 cites·16 claims
- 1588US7723772B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted May 25, 2010·11 cites·8 claims
- 1687US8569728B2Nonvolatile memory with variable resistance change layersTAKANO KENSUKE·Filed 2010·Granted Oct 29, 2013·10 cites·16 claims
- 1785US8759806B2Semiconductor memory deviceYAMAGUCHI TAKESHI·Filed 2011·Granted Jun 24, 2014·7 cites·19 claims
- 1884US8450715B2Nonvolatile metal oxide memory element and nonvolatile memory deviceTAKANO KENSUKE·Filed 2010·Granted May 28, 2013·10 cites·18 claims
- 1983US10367000B2Semiconductor device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2017·Granted Jul 30, 2019·3 cites·16 claims
- 2082US7612404B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Nov 3, 2009·10 cites·20 claims
- 2181US11200529B2Information processing apparatus, information processing system, information processing method and non-transitory computer readable recording mediumNS SOLUTIONS CORP·Filed 2016·Granted Dec 14, 2021·2 cites·16 claims
- 2281US8389968B2Nonvolatile memory deviceSEKINE KATSUYUKI·Filed 2010·Granted Mar 5, 2013·6 cites·20 claims
- 2381US7927949B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2010·Granted Apr 19, 2011·5 cites·6 claims
- 2481US7335562B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Feb 26, 2008·5 cites·6 claims
- 2580US9406691B2Non-volatile memory deviceTOSHIBA KK·Filed 2015·Granted Aug 2, 2016·2 cites·11 claims
- 2679US8558208B2Resistance random access memory including variable-resistance layersFUJITSUKA RYOTA·Filed 2011·Granted Oct 15, 2013·9 cites·10 claims
- 2779US7521309B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2007·Granted Apr 21, 2009·6 cites·10 claims
- 2876US8080463B2Semiconductor device manufacturing method and silicon oxide film forming methodIWASAWA KAZUAKI·Filed 2010·Granted Dec 20, 2011·5 cites·15 claims
- 2976US8008152B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2007·Granted Aug 30, 2011·4 cites·10 claims
- 3074US8598561B2Nonvolatile memory device and method for manufacturing sameSEKINE KATSUYUKI·Filed 2011·Granted Dec 3, 2013·3 cites·17 claims
- 3174US8411486B2Nonvolatile memory device and method of manufacturing the sameSEKINE KATSUYUKI·Filed 2010·Granted Apr 2, 2013·4 cites·9 claims
- 3273US7682899B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2007·Granted Mar 23, 2010·3 cites·8 claims
- 3373US7635891B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Dec 22, 2009·5 cites·20 claims
- 3472US4854891AConnector backshell structureYOKOGAWA AVIAT COMPANY LTD·Filed 1988·Granted Aug 8, 1989·37 cites·6 claims
- 3571US8253189B2Semiconductor device and method for manufacturing the sameSEKINE KATSUYUKI·Filed 2009·Granted Aug 28, 2012·5 cites·1 claims
- 3671US8022486B2CMOS semiconductor deviceTOSHIBA KK·Filed 2007·Granted Sep 20, 2011·3 cites·4 claims
- 3771US7972927B2Method of manufacturing a nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2009·Granted Jul 5, 2011·4 cites·16 claims
- 3870US9406811B2Nonvolatile semiconductor memory device including a charge storage layer formed on first and second insulating layersTOSHIBA KK·Filed 2014·Granted Aug 2, 2016·2 cites·12 claims
- 3970US7608498B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2008·Granted Oct 27, 2009·2 cites·8 claims
- 4069US7375403B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted May 20, 2008·11 cites·4 claims
- 4167US8837225B2Nonvolatile semiconductor memory device and operation method of the sameTOSHIBA KK·Filed 2013·Granted Sep 16, 2014·3 cites·19 claims
- 4267US8759901B2Nonvolatile semiconductor memory device including a charge storage layer and semiconductor region in a grooveHIGUCHI MASAAKI·Filed 2010·Granted Jun 24, 2014·2 cites·7 claims
- 4366US7687869B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Mar 30, 2010·2 cites·15 claims
- 4466US7652341B2Semiconductor apparatus having a semicondutor element with a high dielectric constant filmTOSHIBA KK·Filed 2007·Granted Jan 26, 2010·2 cites·20 claims
- 4566US7521263B2Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor deviceTOSHIBA KK·Filed 2005·Granted Apr 21, 2009·2 cites·14 claims
- 4665US9786678B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2015·Granted Oct 10, 2017·1 cites·20 claims
- 4765US8609487B2Method of manufacturing semiconductor deviceNATORI KATSUAKI·Filed 2010·Granted Dec 17, 2013·2 cites·7 claims
- 4865US8115249B2Nonvolatile semiconductor memory device and method for manufacturing the sameKAMIOKA ISAO·Filed 2009·Granted Feb 14, 2012·3 cites·13 claims
- 4964US10269821B2Three-dimensional semiconductor memory device and method for manufacturing the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Apr 23, 2019·1 cites·16 claims
- 5064US7928500B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Apr 19, 2011·2 cites·16 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →