Inventor · disambiguated record
Kang-Ill Seo
Also filed as: SEO KANG-ILL
97 granted patents·118 pending applications·361 citations·filing 2001–2025
99Inventor score
Top patents by PatentIndex Score
215 records- 0198US9590038B1Semiconductor device having nanowire channelKIM DONG-KWON·Filed 2015·Granted Mar 7, 2017·60 cites·19 claims
- 0298US9425259B1Semiconductor device having a finSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 23, 2016·21 cites·11 claims
- 0397US9601569B1Semiconductor device having a gate all around structureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 21, 2017·23 cites·20 claims
- 0496US11502167B2Semiconductor device having stepped multi-stack transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 15, 2022·4 cites·20 claims
- 0596US9397179B1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 19, 2016·19 cites·23 claims
- 0695US11881455B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 23, 2024·5 cites·8 claims
- 0795US9614068B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 4, 2017·15 cites·20 claims
- 0894US9755034B2Semiconductor device having nanowireSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 5, 2017·13 cites·18 claims
- 0993US12170322B2Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 17, 2024·2 cites·20 claims
- 1093US12125788B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 22, 2024·2 cites·11 claims
- 1193US9735157B1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 15, 2017·15 cites·19 claims
- 1292US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
- 1392US9209179B2FinFET-based semiconductor device with dummy gatesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 8, 2015·14 cites·15 claims
- 1490US12230571B2Integrated circuit devices including a power rail and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 18, 2025·3 cites·14 claims
- 1590US9679965B1Semiconductor device having a gate all around structure and a method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 13, 2017·11 cites·11 claims
- 1690US9343370B1Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 17, 2016·9 cites·20 claims
- 1790US8927373B2Methods of fabricating non-planar transistors including current enhancing structuresSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 6, 2015·9 cites·20 claims
- 1889US9331072B2Integrated circuit devices having air-gap spacers defined by conductive patterns and methods of manufacturing the sameSEO KANG-ILL·Filed 2014·Granted May 3, 2016·11 cites·30 claims
- 1989US8679910B2Methods of fabricating devices including source/drain region with abrupt junction profileMING LI·Filed 2011·Granted Mar 25, 2014·26 cites·19 claims
- 2088US9905559B2Semiconductor device having fin-type field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 27, 2018·3 cites·5 claims
- 2188US9613871B2Semiconductor device and fabricating method thereofSUK SUNG-DAE·Filed 2015·Granted Apr 4, 2017·5 cites·23 claims
- 2287US11764207B2Diode structures of stacked devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
- 2387US9443978B2Semiconductor device having gate-all-around transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 13, 2016·7 cites·20 claims
- 2485US11901363B2Resistance measuring structures of stacked devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·18 claims
- 2585US9570434B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 14, 2017·3 cites·20 claims
- 2685US9362311B1Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 7, 2016·4 cites·20 claims
- 2784US9653462B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 16, 2017·5 cites·20 claims
- 2883US9911851B2Integrated circuit devices having air-gap spacers above gate electrodesSEO KANG ILL·Filed 2016·Granted Mar 6, 2018·4 cites·8 claims
- 2982US6642107B2Non-volatile memory device having self-aligned gate structure and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 4, 2003·30 cites·39 claims
- 3078US12119351B2Semiconductor device having fin-type field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 3178US12087669B1Integrated circuit devices including discharging path and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·16 claims
- 3278US9735153B2Semiconductor device having fin-type field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 15, 2017·2 cites·14 claims
- 3378US9472653B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 18, 2016·3 cites·16 claims
- 3477US12336283B1Three-dimensional stacked semiconductor device including simplified source/drain contact areaSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 3577US9923058B2Semiconductor device having a finSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 20, 2018·2 cites·11 claims
- 3677US9257327B2Methods of forming a Field Effect Transistor, including forming a region providing enhanced oxidationSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 9, 2016·4 cites·23 claims
- 3776US12274092B2Resistance measuring structures of stacked devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
- 3876US2025359308A1Integrated circuit devices including stacked field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3975US2025107201A1Selective single diffusion/electrical barrierSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4074US12310106B2Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 20, 2025·0 cites·8 claims
- 4174US10497719B2Method for selectively increasing silicon fin area for vertical field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 3, 2019·1 cites·10 claims
- 4274US2025107172A1Multi-stack semiconductor device with zebra nanosheet structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4374US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 4473US12464803B2Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chipSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·8 claims
- 4573US12094869B2Diode structures of stacked devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 4673US12068256B2Method of manufacturing a three dimensional integrated semiconductor architecture having alignment marks provided in a carrier substrateSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·9 claims
- 4773US11233008B2Method of manufacturing an integrated circuit with buried power railSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 25, 2022·1 cites·10 claims
- 4873US10930768B2Low current leakage finFET and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·1 cites·21 claims
- 4973US2025351567A1Three-dimensional stacked semiconductor device including simplified source/drain contact areaSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 5073US2025063825A1Integrated circuit devices including discharging path and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 215 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →