Inventor · disambiguated record
Kazuhiro Shimizu
Also filed as: SHIMIZU KAZUHIRO
116 granted patents·18 pending applications·2,830 citations·filing 1995–2023
99Inventor score
Top patents by PatentIndex Score
134 records- 0198US6555427B1Non-volatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2000·Granted Apr 29, 2003·138 cites·25 claims
- 0298US6342715B1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Jan 29, 2002·216 cites·21 claims
- 0398US6340611B1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2000·Granted Jan 22, 2002·160 cites·21 claims
- 0497US6353242B1Nonvolatile semiconductor memoryTOSHIBA KK·Filed 1999·Granted Mar 5, 2002·127 cites·22 claims
- 0597US6265739B1Non-volatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 1998·Granted Jul 24, 2001·120 cites·16 claims
- 0696US6818508B2Non-volatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Nov 16, 2004·66 cites·5 claims
- 0795US6512253B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2001·Granted Jan 28, 2003·45 cites·20 claims
- 0895US5889304ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1997·Granted Mar 30, 1999·165 cites·20 claims
- 0994US6191975B1Non-volatile NAND type semiconductor memory device with stacked gate memory cells and a stacked gate select transistorTOSHIBA KK·Filed 1999·Granted Feb 20, 2001·132 cites·12 claims
- 1094US5946230ANonvolatile semiconductor memory device having the reliability of gate insulating film of memory cells enhanced and method for manufacturing the sameTOSHIBA KK·Filed 1998·Granted Aug 31, 1999·101 cites·17 claims
- 1193US6057580ASemiconductor memory device having shallow trench isolation structureTOSHIBA KK·Filed 1998·Granted May 2, 2000·91 cites·19 claims
- 1292US6258665B1Non-volatile semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2000·Granted Jul 10, 2001·46 cites·8 claims
- 1391US6870096B2Electrical junction box and method of manufacturing the sameYAZAKI CORP·Filed 2003·Granted Mar 22, 2005·54 cites·10 claims
- 1490US6784503B2Non-volatile semiconductor memory device having memory cell array suitable for high density and high integrationTOSHIBA KK·Filed 2001·Granted Aug 31, 2004·39 cites·23 claims
- 1590US6160297ASemiconductor memory device having a first source line arranged between a memory cell string and bit lines in the direction crossing the bit lines and a second source line arranged in parallel to the bit linesTOSHIBA KK·Filed 1998·Granted Dec 12, 2000·119 cites·15 claims
- 1689US7122432B2Non-volatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Oct 17, 2006·29 cites·9 claims
- 1789US6115287ANonvolatile semiconductor memory device using SOITOSHIBA KK·Filed 1998·Granted Sep 5, 2000·77 cites·16 claims
- 1888US8324657B2Semiconductor deviceSHIMIZU KAZUHIRO·Filed 2011·Granted Dec 4, 2012·6 cites·2 claims
- 1987US7582946B2Semiconductor device with multi-trench separation region and method for producing the sameMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Sep 1, 2009·12 cites·17 claims
- 2086US7893477B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2007·Granted Feb 22, 2011·6 cites·20 claims
- 2186US7481885B2Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Jan 27, 2009·8 cites·4 claims
- 2286US6570098B2Printed wiring board and method for producing the sameSONY CORP·Filed 2001·Granted May 27, 2003·32 cites·2 claims
- 2386US6534867B1Semiconductor device, semiconductor element and method for producing sameTOSHIBA KK·Filed 2000·Granted Mar 18, 2003·34 cites·6 claims
- 2485US7425739B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2005·Granted Sep 16, 2008·6 cites·12 claims
- 2585US6974979B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2002·Granted Dec 13, 2005·17 cites·14 claims
- 2685US6280263B1Anti-rotation terminal with captured nutYAZAKI NORTH AMERICA INC·Filed 2000·Granted Aug 28, 2001·42 cites·16 claims
- 2783US7439122B2Method of manufacturing semiconductor device having improved RESURF Trench isolation and method of evaluating manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Oct 21, 2008·7 cites·4 claims
- 2883US7109547B2Non-volatile semiconductor memory device having memory cell array suitable for high density and high integrationTOSHIBA KK·Filed 2005·Granted Sep 19, 2006·7 cites·11 claims
- 2983US6462373B2Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layerTOSHIBA KK·Filed 2000·Granted Oct 8, 2002·27 cites·13 claims
- 3082US9173107B2Analog front-end circuit for measurementYOKOGAWA ELECTRIC CORP·Filed 2013·Granted Oct 27, 2015·7 cites·12 claims
- 3182US7408228B2Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Aug 5, 2008·10 cites·3 claims
- 3282US6828627B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Dec 7, 2004·23 cites·19 claims
- 3382US6060740ANon-volatile semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 1998·Granted May 9, 2000·40 cites·19 claims
- 3481US7049850B2Semiconductor device with a voltage detecting device to prevent shoot-through phenomenon in first and second complementary switching devicesMITSUBISHI ELECTRIC CORP·Filed 2004·Granted May 23, 2006·29 cites·26 claims
- 3581US6703669B1Semiconductor device having serially connected memory cell transistors provided between two current terminalsTOSHIBA KK·Filed 2000·Granted Mar 9, 2004·23 cites·18 claims
- 3681US6507085B2Semiconductor device comprising diodeMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 14, 2003·30 cites·10 claims
- 3781US5574254AWater-proof sealing structure for an electric junction boxYAZAKI CORP·Filed 1995·Granted Nov 12, 1996·101 cites·4 claims
- 3880US7888728B2Non-volatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2008·Granted Feb 15, 2011·4 cites·8 claims
- 3980US6828624B1Nonvolatile semiconductor memory device covered with insulating film which is hard for an oxidizing agent to pass therethroughTOSHIBA KK·Filed 2000·Granted Dec 7, 2004·33 cites·28 claims
- 4080US6472701B2Non-volatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2000·Granted Oct 29, 2002·15 cites·2 claims
- 4180US5894156ASemiconductor device having a high breakdown voltage isolation regionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 13, 1999·46 cites·14 claims
- 4279US8093923B2Semiconductor deviceSHIMIZU KAZUHIRO·Filed 2009·Granted Jan 10, 2012·8 cites·8 claims
- 4379US6049482ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Apr 11, 2000·43 cites·20 claims
- 4478US11387231B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Jul 12, 2022·1 cites·7 claims
- 4578US7332762B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted Feb 19, 2008·3 cites·15 claims
- 4678US7005345B2Non-volatile semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2004·Granted Feb 28, 2006·12 cites·2 claims
- 4778US6240012B1Semiconductor memory device capable of realizing a chip with high operation reliability and high yieldTOSHIBA KK·Filed 1999·Granted May 29, 2001·22 cites·40 claims
- 4877US7359228B2Semiconductor memory device capable of realizing a chip with high operation reliability and high yieldTOSHIBA KK·Filed 2006·Granted Apr 15, 2008·5 cites·49 claims
- 4977US7327007B2Semiconductor device with high breakdown voltageMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Feb 5, 2008·21 cites·18 claims
- 5076US8609443B2Semiconductor device manufacturing methodSHIMIZU KAZUHIRO·Filed 2012·Granted Dec 17, 2013·2 cites·7 claims
Showing the top 50 of 134 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →