Inventor · disambiguated record

Katsuya Shino

Also filed as: SHINO KATSUYA

3 granted patents·61 citations·filing 1991–1992

70Inventor score

Technology areasH10D

Files withTOSHIBA KK3

Top patents by PatentIndex Score

3 records

0176US5256894ASemiconductor device having variable impurity concentration polysilicon layerTOSHIBA KK·Filed 1991·Granted Oct 26, 1993·52 cites·7 claims
0234US5238873AMethod for manufacturing semiconductor device having a metallic silicide layerTOSHIBA KK·Filed 1991·Granted Aug 24, 1993·7 cites·4 claims
0320US5279979ASemiconductor having diffusion region separated from the gap electrode and wiring layerTOSHIBA KK·Filed 1992·Granted Jan 18, 1994·2 cites·2 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →