Inventor · disambiguated record
Kazuyuki Tadatomo
Also filed as: TADATOMO KAZUYUKI
19 granted patents·3 pending applications·852 citations·filing 1989–2012
96Inventor score
Top patents by PatentIndex Score
22 records- 0196US5770887AGaN single crystalMITSUBISHI CABLE IND LTD·Filed 1994·Granted Jun 23, 1998·204 cites·8 claims
- 0293US6225650B1GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereofMITSUBISHI CABLE IND LTD·Filed 1998·Granted May 1, 2001·193 cites·12 claims
- 0392US6940098B1Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing methodMITSUBISHI CABLE IND LTD·Filed 2000·Granted Sep 6, 2005·54 cites·14 claims
- 0491US7053420B2GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereofMITSUBISHI CABLE IND LTD·Filed 2002·Granted May 30, 2006·126 cites·16 claims
- 0589US5810925AGaN single crystalMITSUBISHI CABLE IND LTD·Filed 1996·Granted Sep 22, 1998·56 cites·11 claims
- 0687US7589001B2Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing methodMITSUBISHI CHEM CORP·Filed 2006·Granted Sep 15, 2009·9 cites·9 claims
- 0786US7179667B2Semiconductor base material and method of manufacturing the materialMITSUBISHI CABLE IND LTD·Filed 2001·Granted Feb 20, 2007·41 cites·9 claims
- 0883US8384111B2Method for forming sapphire substrate and semiconductor deviceUNIV YAMAGUCHI·Filed 2010·Granted Feb 26, 2013·8 cites·12 claims
- 0982US9293647B2Nitride semiconductor light-emitting device and method of manufacturing the sameSHARP KK·Filed 2012·Granted Mar 22, 2016·4 cites·14 claims
- 1080US7115486B2Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing methodMITSUBISHI CABLE IND LTD·Filed 2004·Granted Oct 3, 2006·18 cites·7 claims
- 1175US7504324B2Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing methodMITSUBISHI CHEM CORP·Filed 2006·Granted Mar 17, 2009·3 cites·8 claims
- 1274US6700179B1Method for growing GaN compound semiconductor crystal and semiconductor substrateMITSUBISHI CABLE IND LTD·Filed 2000·Granted Mar 2, 2004·15 cites·6 claims
- 1371US6794210B2Method for growing GaN compound semiconductor crystal and semiconductor substrateMITSUBISHI CABLE IND LTD·Filed 2003·Granted Sep 21, 2004·12 cites·15 claims
- 1470US5793061AGroup-III nitride based light emitterMITSUBISHI CABLE IND LTD·Filed 1996·Granted Aug 11, 1998·49 cites·5 claims
- 1551US6734515B1Semiconductor light receiving elementMITSUBISHI CABLE IND LTD·Filed 1999·Granted May 11, 2004·17 cites·6 claims
- 1650US5635733ASemiconductor light emitting element with a current diffusing layer having a changing carrier concentration thereinMITSUBISHI CABLE IND LTD·Filed 1996·Granted Jun 3, 1997·16 cites·16 claims
- 1741US5631475ASemiconductor light emitting elementMITSUBISHI CABLE IND LTD·Filed 1995·Granted May 20, 1997·9 cites·9 claims
- 1841US4944811AMaterial for light emitting element and method for crystal growth thereofTOKUZO SUKEGAWA·Filed 1989·Granted Jul 31, 1990·13 cites·4 claims
- 1935US5710440ASemiconductor light emitting element with In GaAlP active layer of specified thicknessMITSUBISHI CABLE IND LTD·Filed 1996·Granted Jan 20, 1998·5 cites·10 claims
- 2035US2013313567A1Base substrate, gallium nitride crystal multi-layer substrate and production process thereforFURUYA HIROSHI·Filed 2012·Application pending·0 cites
- 2134US2004056258A1Multi-wavelength luminous elementFiled 2001·Application pending·0 cites
- 2231US2008048194A1Nitride Semiconductor Light-Emitting DeviceKUDO HIROMITSU·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →