Inventor · disambiguated record
Katsumi Tokiguchi
Also filed as: TOKIGUCHI KATSUMI
19 granted patents·4 pending applications·524 citations·filing 1976–2025
96Inventor score
Top patents by PatentIndex Score
23 records- 0196US4543465AMicrowave plasma source having improved switching operation from plasma ignition phase to normal ion extraction phaseHITACHI LTD·Filed 1983·Granted Sep 24, 1985·108 cites·11 claims
- 0291US5053678AMicrowave ion sourceHITACHI LTD·Filed 1989·Granted Oct 1, 1991·48 cites·6 claims
- 0389US4393333AMicrowave plasma ion sourceHITACHI LTD·Filed 1980·Granted Jul 12, 1983·38 cites·6 claims
- 0488US5945681AIon implanting apparatus capable of preventing discharge flaw production on reverse side surface of waferHITACHI LTD·Filed 1997·Granted Aug 31, 1999·53 cites·21 claims
- 0587US4409520AMicrowave discharge ion sourceHITACHI LTD·Filed 1981·Granted Oct 11, 1983·29 cites·8 claims
- 0685US4058748AMicrowave discharge ion sourceHITACHI LTD·Filed 1976·Granted Nov 15, 1977·23 cites·13 claims
- 0783US4658143AIon sourceHITACHI LTD·Filed 1985·Granted Apr 14, 1987·29 cites·33 claims
- 0882US4633138AIon implanterHITACHI LTD·Filed 1985·Granted Dec 30, 1986·43 cites·4 claims
- 0976US4801847ACharged particle accelerator using quadrupole electrodesHITACHI LTD·Filed 1984·Granted Jan 31, 1989·26 cites·8 claims
- 1076US4316090AMicrowave plasma ion sourceHITACHI LTD·Filed 1980·Granted Feb 16, 1982·17 cites·8 claims
- 1174US5086256AExternal resonance circuit type radio frequency quadrupole acceleratorAGENCY IND SCIENCE TECHN·Filed 1989·Granted Feb 4, 1992·18 cites·8 claims
- 1271US5925886AIon source and an ion implanting apparatus using itHITACHI LTD·Filed 1997·Granted Jul 20, 1999·22 cites·7 claims
- 1371US2025367752A1Gas cluster ion beam apparatusIIPT INC·Filed 2025·Application pending·0 cites
- 1470US4533831ANon-mass-analyzed ion implantationHITACHI LTD·Filed 1983·Granted Aug 6, 1985·31 cites·19 claims
- 1566US6043499ACharge-up prevention method and ion implanting apparatusHITACHI LTD·Filed 1998·Granted Mar 28, 2000·18 cites·10 claims
- 1656US2025391627A1Gas cluster ion beam apparatusIIPT INC·Filed 2023·Application pending·0 cites
- 1751US5349196AIon implanting apparatusHITACHI LTD·Filed 1993·Granted Sep 20, 1994·9 cites·7 claims
- 1842US6104025AIon implanting apparatus capable of preventing discharge flaw production on reverse side surface of waferHITACHI LTD·Filed 1999·Granted Aug 15, 2000·4 cites·8 claims
- 1940US4629930APlasma ion sourceHITACHI LTD·Filed 1983·Granted Dec 16, 1986·4 cites·5 claims
- 2035US2001013578A1Ion implantation equipment and implantation method thereofFiled 2001·Application pending·0 cites
- 2135US2003211711A1Wafer processing method and ion implantation apparatusFiled 2003·Application pending·0 cites
- 2234US5506472AVariable-frequency type radio-frequency quadrupole accelerator including quadrupole cooling meansHITACHI LTD·Filed 1994·Granted Apr 9, 1996·4 cites·8 claims
- 2330US5729027AIon implanterHITACHI LTD·Filed 1995·Granted Mar 17, 1998·0 cites·39 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →