Inventor · disambiguated record
Kazuyoshi Tomita
Also filed as: TOMITA KAZUYOSHI
20 granted patents·3 pending applications·276 citations·filing 1991–2019
95Inventor score
Top patents by PatentIndex Score
23 records- 0196US9818856B2Semiconductor device with high electron mobility transistorDENSO CORP·Filed 2012·Granted Nov 14, 2017·33 cites·18 claims
- 0294US7646036B2Electrode and Group III nitride-based compound semiconductor light-emitting device having the electrodeTOYOTA CHUO KENKYUSHO KK·Filed 2008·Granted Jan 12, 2010·30 cites·20 claims
- 0390US7052979B2Production method for semiconductor crystal and semiconductor luminous elementTOYODA GOSEI KK·Filed 2002·Granted May 30, 2006·56 cites·5 claims
- 0481US6649943B2Group III nitride compound semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2002·Granted Nov 18, 2003·33 cites·20 claims
- 0577US10763333B2Nitride semiconductor device and method of manufacturing nitride semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2019·Granted Sep 1, 2020·2 cites·9 claims
- 0675US5889806AGroup III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1997·Granted Mar 30, 1999·39 cites·7 claims
- 0774US8420502B2Group III-V semiconductor device and method for producing the sameANDO MASANOBU·Filed 2010·Granted Apr 16, 2013·2 cites·19 claims
- 0872US7163876B2Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2002·Granted Jan 16, 2007·15 cites·17 claims
- 0967US10381469B2Semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2014·Granted Aug 13, 2019·2 cites·12 claims
- 1066US7011707B2Production method for semiconductor substrate and semiconductor elementTOYODA GOSEI KK·Filed 2002·Granted Mar 14, 2006·11 cites·40 claims
- 1164US6844246B2Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on itTOYODA GOSEI KK·Filed 2002·Granted Jan 18, 2005·10 cites·13 claims
- 1259US6964705B2Method for producing semiconductor crystalTOYODA GOSEI KK·Filed 2003·Granted Nov 15, 2005·6 cites·10 claims
- 1358US5940314AUltra-high density memory deviceTOYODA CHUO KENKYUSHO KK·Filed 1998·Granted Aug 17, 1999·14 cites·15 claims
- 1452US6716655B2Group III nitride compound semiconductor element and method for producing the sameTOYODA GOSEI KK·Filed 2002·Granted Apr 6, 2004·3 cites·8 claims
- 1552US5604761ALayered semiconductor laser having solder laminations and method of making sameTOYOTA MOTOR CO LTD·Filed 1994·Granted Feb 18, 1997·13 cites·2 claims
- 1650US7342364B2Light sourceTOYODA GOSEI KK·Filed 2005·Granted Mar 11, 2008·0 cites·14 claims
- 1750US2008237629A1Group III-V Semiconductor device and method for producing the sameTOYODA GOSEI KK·Filed 2008·Application pending·0 cites
- 1846US5232750AMethod for fabricating magnetic recording mediumFUJI ELECTRIC CO LTD·Filed 1991·Granted Aug 3, 1993·7 cites·8 claims
- 1941US9728609B2Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layerTOYOTA CHUO KENKYUSHO KK·Filed 2012·Granted Aug 8, 2017·0 cites·14 claims
- 2041US9536996B2Apparatus and method of manufacturing a support layerTOYOTA CHUO KENKYUSHO KK·Filed 2015·Granted Jan 3, 2017·0 cites·15 claims
- 2140US2005220157A1Semiconductor laser and method for producing the sameTOYODA GOSEI KK·Filed 2005·Application pending·0 cites
- 2233US2004077166A1Semiconductor crystal growing method and semiconductor light-emitting deviceFiled 2002·Application pending·0 cites
- 2327US5576111AMagnetic recording mediumFUJI ELECTRIC CO LTD·Filed 1994·Granted Nov 19, 1996·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →