Inventor · disambiguated record
Katsuhiro Tsukamoto
Also filed as: TSUKAMOTO KATSUHIRO
46 granted patents·2,955 citations·filing 1982–1999
99Inventor score
Top patents by PatentIndex Score
46 records- 0198US5178682AMethod for forming a thin layer on a semiconductor substrate and apparatus thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 12, 1993·661 cites·5 claims
- 0298US5174881AApparatus for forming a thin film on surface of semiconductor substrateMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 29, 1992·448 cites·4 claims
- 0397US5407867AMethod of forming a thin film on surface of semiconductor substrateMITSUBISHKI DENKI KABUSHIKI KA·Filed 1992·Granted Apr 18, 1995·380 cites·10 claims
- 0494US5208473ALightly doped MISFET with reduced latchup and punchthroughMITSUBISHI ELECTRIC CORP·Filed 1991·Granted May 4, 1993·126 cites·7 claims
- 0589US5138420ASemiconductor device having first and second type field effect transistors separated by a barrierMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Aug 11, 1992·73 cites·4 claims
- 0689US4855953ASemiconductor memory device having stacked memory capacitors and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Aug 8, 1989·58 cites·30 claims
- 0788US5478761AMethod of producing semiconductor device having first and second type field effect transistorsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 26, 1995·63 cites·6 claims
- 0888US5478759AMethod of manufacturing semiconductor device with retrograde wellsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 26, 1995·98 cites·39 claims
- 0986US5525821APN junction trench isolation type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 11, 1996·69 cites·18 claims
- 1086US5427972AMethod of making a sidewall contactMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jun 27, 1995·81 cites·1 claims
- 1185US5258319AMethod of manufacturing a MOS type field effect transistor using an oblique ion implantation stepMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 2, 1993·95 cites·9 claims
- 1285US5028560AMethod for forming a thin layer on a semiconductor substrateMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jul 2, 1991·71 cites·9 claims
- 1384US5412237ASemiconductor device with improved element isolation and operation rateMITSUBISHI ELECTRIC CORP·Filed 1993·Granted May 2, 1995·48 cites·11 claims
- 1482US4931897AMethod of manufacturing semiconductor capacitive elementMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jun 5, 1990·42 cites·17 claims
- 1580US5470799AMethod for pretreating semiconductor substrate by photochemically removing native oxideMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 28, 1995·54 cites·10 claims
- 1679US4916508ACMOS type integrated circuit and a method of producing sameMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Apr 10, 1990·36 cites·4 claims
- 1777US5019520AMethod for preparing a high mobility, lightly-doped channel mis-type FET with reduced latch up and punchthroughMITSUBISHI ELECTRIC CORP·Filed 1990·Granted May 28, 1991·40 cites·12 claims
- 1875US5141882ASemiconductor field effect device having channel stop and channel region formed in a well and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 25, 1992·60 cites·7 claims
- 1970US4707723ASemiconductor device using a refractory metal as an electrode and interconnectionMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Nov 17, 1987·35 cites·9 claims
- 2065US5061654ASemiconductor integrated circuit having oxide regions with different thicknessMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Oct 29, 1991·26 cites·6 claims
- 2165US4978629AMethod of making a metal-oxide-semiconductor device having shallow source and drain diffused regionsMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Dec 18, 1990·26 cites·6 claims
- 2264US5457339ASemiconductor device for element isolation and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 10, 1995·32 cites·19 claims
- 2364US5293060ASemiconductor device with diffusion well isolationMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 8, 1994·28 cites·6 claims
- 2464US5047818ASemiconductor memory device having buried structure to suppress soft errorsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Sep 10, 1991·19 cites·14 claims
- 2563US5250458AMethod for manufacturing semiconductor memory device having stacked memory capacitorsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 5, 1993·23 cites·14 claims
- 2662US5061975AMOS type field effect transistor having LDD structureMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 29, 1991·34 cites·8 claims
- 2757US5466623AMethod of making semiconductor integrated circuit having isolation oxide regions with different thicknessMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 14, 1995·21 cites·9 claims
- 2857US4859615ASemiconductor memory cell capacitor and method for making the sameMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Aug 22, 1989·15 cites·9 claims
- 2956US5045901ADouble diffusion metal-oxide-semiconductor device having shallow source and drain diffused regionsMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Sep 3, 1991·22 cites·5 claims
- 3055US5534730AConductive layer connection structure of a semiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 9, 1996·16 cites·16 claims
- 3155US4441932AProcess for preparing semiconductor device having active base region implanted therein using walled emitter opening and the edge of dielectric isolation zoneMITSUBISHI ELECTRIC CORP·Filed 1982·Granted Apr 10, 1984·19 cites·1 claims
- 3254US4708904ASemiconductor device and a method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1985·Granted Nov 24, 1987·19 cites·11 claims
- 3354US4702797AMethod of manufacturing semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Oct 27, 1987·16 cites·8 claims
- 3452US5258321AManufacturing method for semiconductor memory device having stacked trench capacitors and improved intercell isolationMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 2, 1993·15 cites·11 claims
- 3552US5196908AMicro MIS type FET and manufacturing process thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 23, 1993·11 cites·4 claims
- 3647US5448093AMicro MIS type FET and manufacturing process thereforMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 5, 1995·8 cites·3 claims
- 3747US5401671AMethod of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Mar 28, 1995·13 cites·7 claims
- 3843US5945716ASemiconductor wafer and device structureMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 31, 1999·10 cites·20 claims
- 3942US6211070B1Peripheral structure of a chip as a semiconductor device, and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 3, 2001·8 cites·7 claims
- 4042US5268321AMethod of making DRAM cell having improved radiation protectionMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Dec 7, 1993·7 cites·11 claims
- 4140US5652168AMethod of forming a semiconductor device having a capacitor with improved element isolation and operation rateMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 29, 1997·5 cites·17 claims
- 4240US5023682ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jun 11, 1991·6 cites·17 claims
- 4340US4942448AStructure for isolating semiconductor components on an integrated circuit and a method of manufacturing thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jul 17, 1990·9 cites·33 claims
- 4436US5883408ASemiconductor memory device and method for making the sameMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 16, 1999·5 cites·1 claims
- 4534US5330923AManufacturing process for a micro MIS type FETMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 19, 1994·2 cites·14 claims
- 4631US5087588AMethod of making a side wall contact with reactive ion etchingMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Feb 11, 1992·2 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →