Inventor · disambiguated record
Kao-Hsing Wang
Also filed as: WANG KAO-HSING
2 granted patents·58 citations·filing 1998–1998
63Inventor score
Technology areasH10D
Files withVANGUARD INT SEMICONDUCT CORP2
Top patents by PatentIndex Score
2 records- 0177US6037220AMethod of increasing the surface area of a DRAM capacitor structure via the use of hemispherical grained polysiliconVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Mar 14, 2000·52 cites·21 claims
- 0232US6143596APlanarization for interlayer dielectricVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Nov 7, 2000·6 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →