Inventor · disambiguated record
Kaiyou Wang
Also filed as: WANG KAIYOU
8 granted patents·1 pending application·10 citations·filing 2016–2024
78Inventor score
Files withINST SEMICONDUCTORS CAS9
Top patents by PatentIndex Score
9 records- 0182US11249150B2Spin valve and spintronic device comprising the sameINST SEMICONDUCTORS CAS·Filed 2020·Granted Feb 15, 2022·2 cites·8 claims
- 0282US10964829B2InGaN-based resonant cavity enhanced detector chip based on porous DBRINST SEMICONDUCTORS CAS·Filed 2017·Granted Mar 30, 2021·2 cites·9 claims
- 0380US11307270B2Spin valve with built-in electric field and spintronic device comprising the sameINST SEMICONDUCTORS CAS·Filed 2020·Granted Apr 19, 2022·2 cites·8 claims
- 0475US11258231B2GaN-based VCSEL chip based on porous DBR and manufacturing method of the sameINST SEMICONDUCTORS CAS·Filed 2017·Granted Feb 22, 2022·2 cites·6 claims
- 0575US10978121B2Voltage control magnetic random storage unit, memory and logic device composed therebyINST SEMICONDUCTORS CAS·Filed 2016·Granted Apr 13, 2021·2 cites·10 claims
- 0652US11972786B2Function switchable magnetic random access memory and method for manufacturing the sameINST SEMICONDUCTORS CAS·Filed 2022·Granted Apr 30, 2024·0 cites·10 claims
- 0745US2023024744A1Method and system for optimizing problem-solving based on probabilistic bit circuitsINST SEMICONDUCTORS CAS·Filed 2022·Application pending·0 cites
- 0843US12343711B2Semiconductor material based on metal nanowires and porous nitride and preparation method thereofINST SEMICONDUCTORS CAS·Filed 2018·Granted Jul 1, 2025·0 cites·14 claims
- 0938US12488820B2Spin-orbit torque magnetoresistive random access memory and method of operating the sameINST SEMICONDUCTORS CAS·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →