Inventor · disambiguated record
Katsuyoshi Washio
Also filed as: WASHIO KATSUYOSHI
47 granted patents·1 pending application·1,209 citations·filing 1985–2010
99Inventor score
Top patents by PatentIndex Score
48 records- 0196US6724019B2Multi-layered, single crystal field effect transistorRENESAS TECH CORP·Filed 2001·Granted Apr 20, 2004·109 cites·8 claims
- 0294US6936875B2Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing sameRENESAS TECH CORP·Filed 2003·Granted Aug 30, 2005·99 cites·11 claims
- 0394US5962880AHeterojunction bipolar transistorHITACHI LTD·Filed 1997·Granted Oct 5, 1999·154 cites·18 claims
- 0493US7095043B2Semiconductor device, semiconductor circuit module and manufacturing method of the sameHITACHI LTD·Filed 2004·Granted Aug 22, 2006·83 cites·16 claims
- 0589US7368763B2Semiconductor device and manufacturing method thereofHITACHI LTD·Filed 2005·Granted May 6, 2008·14 cites·21 claims
- 0689US6667489B2Heterojunction bipolar transistor and method for production thereofHITACHI LTD·Filed 2002·Granted Dec 23, 2003·53 cites·17 claims
- 0788US6482710B2Bipolar transistor and manufacting method thereofHITACHI LTD·Filed 2001·Granted Nov 19, 2002·47 cites·5 claims
- 0887US6723541B2Method of producing semiconductor device and semiconductor substrateHITACHI LTD·Filed 2002·Granted Apr 20, 2004·46 cites·10 claims
- 0986US6995054B2Method of manufacturing a semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Feb 7, 2006·34 cites·12 claims
- 1085US8212615B2Variable-gain amplifier circuit and wireless communication device integrated circuit equipped therewithMASUDA TORU·Filed 2010·Granted Jul 3, 2012·11 cites·14 claims
- 1184US6521974B1Bipolar transistor and manufacturing method thereofHITACHI LTD·Filed 2000·Granted Feb 18, 2003·35 cites·21 claims
- 1282US6004865AMethod of fabricating multi-layered structure having single crystalline semiconductor film formed on insulatorHITACHI LTD·Filed 1996·Granted Dec 21, 1999·45 cites·5 claims
- 1377US6658217B2Optical receiverHITACHI LTD·Filed 2001·Granted Dec 2, 2003·16 cites·12 claims
- 1477US5523602AMulti-layered structure having single crystalline semiconductor film formed on insulatorHITACHI LTD·Filed 1994·Granted Jun 4, 1996·61 cites·18 claims
- 1575US8121579B2Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using itSHIRAMIZU NOBUHIRO·Filed 2009·Granted Feb 21, 2012·8 cites·20 claims
- 1674US7071500B2Semiconductor device and manufacturing method for the sameRENESAS TECH CORP·Filed 2004·Granted Jul 4, 2006·19 cites·5 claims
- 1774US6600178B1Heterojunction bipolar transistorHITACHI LTD·Filed 2000·Granted Jul 29, 2003·19 cites·6 claims
- 1874US6313012B1Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulatorHITACHI LTD·Filed 1999·Granted Nov 6, 2001·30 cites·6 claims
- 1974US6304357B1Optical receiverHITACHI LTD·Filed 1998·Granted Oct 16, 2001·43 cites·6 claims
- 2073US6987983B2Radio frequency monolithic integrated circuit and method for manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jan 17, 2006·19 cites·15 claims
- 2173US6472753B2BICMOS semiconductor integrated circuit device and fabrication process thereofHITACHI LTD·Filed 2001·Granted Oct 29, 2002·14 cites·3 claims
- 2272US6388307B1Bipolar transistorHITACHI LTD·Filed 1999·Granted May 14, 2002·30 cites·12 claims
- 2370US6476450B2BICMOS semiconductor integrated circuit device and fabrication process thereofHITACHI LTD·Filed 2001·Granted Nov 5, 2002·12 cites·8 claims
- 2470US6469367B2Bipolar transistorHITACHI LTD·Filed 2001·Granted Oct 22, 2002·11 cites·10 claims
- 2569US7214973B2Semiconductor device and method of manufacturing the sameHITACHI LTD·Filed 2005·Granted May 8, 2007·4 cites·14 claims
- 2667US6501153B2Semiconductor device and drive circuit using the semiconductor devicesHITACHI LTD·Filed 2002·Granted Dec 31, 2002·12 cites·18 claims
- 2765US6974977B2Heterojunction bipolar transistorHITACHI DEVICE ENG·Filed 2003·Granted Dec 13, 2005·11 cites·10 claims
- 2863US7045412B2Field-effect type semiconductor device for power amplifierRENESAS TECH CORP·Filed 2004·Granted May 16, 2006·9 cites·11 claims
- 2963US6815822B2BICMOS semiconductor integrated circuit device and fabrication process thereofHITACHI LTD·Filed 2002·Granted Nov 9, 2004·8 cites·11 claims
- 3061US7098740B2Radio frequency power amplifier and communication systemRENESAS TECH CORP·Filed 2003·Granted Aug 29, 2006·10 cites·6 claims
- 3161US6815707B2Field-effect type semiconductor device for power amplifierRENESAS TECH CORP·Filed 2002·Granted Nov 9, 2004·8 cites·16 claims
- 3261US6785477B1Optical receiver using variable negative-capacitance circuitHITACHI LTD·Filed 1998·Granted Aug 31, 2004·21 cites·19 claims
- 3361US5598015AHetero-junction bipolar transistor and semiconductor devices using the sameHITACHI LTD·Filed 1994·Granted Jan 28, 1997·20 cites·5 claims
- 3452US7521734B2Semiconductor device with reduced base resistanceRENESAS TECH CORP·Filed 2004·Granted Apr 21, 2009·5 cites·8 claims
- 3551US4887145ASemiconductor device in which electrodes are formed in a self-aligned mannerHITACHI LTD·Filed 1986·Granted Dec 12, 1989·18 cites·40 claims
- 3647US8711523B2Stacked magnetoresistance device responsive to a magnetic field generally perpendicular to a side face running along a channel of the deviceOGAWA SUSUMU·Filed 2010·Granted Apr 29, 2014·0 cites·19 claims
- 3747US6956255B2Semiconductor device and drive circuit using the semiconductor devicesHITACHI DEVICE ENG·Filed 2002·Granted Oct 18, 2005·2 cites·19 claims
- 3846US7842973B2Semiconductor device and manufacturing method of the sameHITACHI LTD·Filed 2006·Granted Nov 30, 2010·2 cites·17 claims
- 3945US5430317ASemiconductor deviceHITACHI LTD·Filed 1993·Granted Jul 4, 1995·10 cites·24 claims
- 4044US5324983ASemiconductor deviceHITACHI LTD·Filed 1992·Granted Jun 28, 1994·10 cites·31 claims
- 4144US4949151ABipolar transistor having side wall base and collector contactsHITACHI LTD·Filed 1987·Granted Aug 14, 1990·12 cites·36 claims
- 4242US6653715B2Bipolar transistorHITACHI LTD·Filed 2002·Granted Nov 25, 2003·0 cites·8 claims
- 4341US2004213580A1Transmitter and a signal generator in optical transmission systemsHITACHI LTD·Filed 2002·Application pending·0 cites
- 4440US5109263ASemiconductor device with optimal distance between emitter and trench isolationHITACHI LTD·Filed 1990·Granted Apr 28, 1992·11 cites·9 claims
- 4539US5424575ASemiconductor device for SOI structure having lead conductor suitable for fine patterningHITACHI LTD·Filed 1992·Granted Jun 13, 1995·7 cites·22 claims
- 4636US4926235ASemiconductor deviceTAMAKI YOICHI·Filed 1987·Granted May 15, 1990·8 cites·30 claims
- 4735US4694321ASemiconductor device having bipolar transistor and integrated injection logicHITACHI LTD·Filed 1985·Granted Sep 15, 1987·8 cites·7 claims
- 4827US4697102ABipolar logic circuit having two multi-emitter transistors with an emitter of one connected to the collector of the other to prevent saturationHITACHI MICROCUMPUTER ENG·Filed 1985·Granted Sep 29, 1987·1 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →