Inventor · disambiguated record
Kai-Cyuan Yang
Also filed as: YANG KAI-CYUAN
3 granted patents·3 citations·filing 2017–2023
56Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD3
Top patents by PatentIndex Score
3 records- 0183US10804161B2CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·3 cites·20 claims
- 0274US11961768B2CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 16, 2024·0 cites·18 claims
- 0367US11682589B2CMOS finFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 20, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →