Inventor · disambiguated record
Karthik Yogendra
Also filed as: YOGENDRA KARTHIK
11 granted patents·1 pending application·4 citations·filing 2017–2022
79Inventor score
Files withIBM12
Top patents by PatentIndex Score
12 records- 0187US10833258B1MRAM device formation with in-situ encapsulationIBM·Filed 2019·Granted Nov 10, 2020·3 cites·13 claims
- 0272US10978573B2Spacer-confined epitaxial growthIBM·Filed 2019·Granted Apr 13, 2021·1 cites·20 claims
- 0370US11664059B2Low power MTJ-based analog memory deviceIBM·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 0464US12471497B2Magnetic tunnel junction device with magnetoelectric assistIBM·Filed 2022·Granted Nov 11, 2025·0 cites·14 claims
- 0562US11823724B2Magneto-electric low power analogue magnetic tunnel junction memoryIBM·Filed 2021·Granted Nov 21, 2023·0 cites·17 claims
- 0660US11514962B2Two-bit magnetoresistive random-access memory cellIBM·Filed 2020·Granted Nov 29, 2022·0 cites·22 claims
- 0755US12178137B2In-array magnetic shield for spin-transfer torque magneto-resistive random access memoryIBM·Filed 2021·Granted Dec 24, 2024·0 cites·20 claims
- 0855US11456413B2In-situ drift-mitigation liner for pillar cell PCMIBM·Filed 2020·Granted Sep 27, 2022·0 cites·7 claims
- 0950US12112782B2Compact MRAM architecture with magnetic bottom electrodeIBM·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
- 1050US11335850B2Magnetoresistive random-access memory device including magnetic tunnel junctionsIBM·Filed 2020·Granted May 17, 2022·0 cites·20 claims
- 1148US10593870B2Sidewall image transfer on magnetic tunnel junction stack for magnetoresistive random-access memory patterningIBM·Filed 2017·Granted Mar 17, 2020·0 cites·17 claims
- 1246US2023411533A1Multi-state field effect transistor deviceIBM·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →