Inventor · disambiguated record
Katsuo Yuhara
Also filed as: YUHARA KATSUO
12 granted patents·249 citations·filing 1984–2004
92Inventor score
Top patents by PatentIndex Score
12 records- 0187US4543441ASolar battery using amorphous siliconHITACHI LTD·Filed 1984·Granted Sep 24, 1985·58 cites·15 claims
- 0286US5804479AMethod for forming semiconductor integrated circuit device having a capacitorHITACHI LTD·Filed 1996·Granted Sep 8, 1998·58 cites·25 claims
- 0381US5578849ASemiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitanceHITACHI LTD·Filed 1994·Granted Nov 26, 1996·35 cites·14 claims
- 0473US5732009ASemiconductor integrated circuit device including a DRAM in which a cell selection transistor has a stabilized threshold voltageHITACHI LTD·Filed 1996·Granted Mar 24, 1998·33 cites·11 claims
- 0559US6753219B2Method of manufacturing semiconductor integrated circuit devices having a memory device with a reduced bit line stray capacity and such semiconductor integrated circuit devicesHITACHI LTD·Filed 2002·Granted Jun 22, 2004·8 cites·7 claims
- 0659US6060352AMethod of manufacturing semiconductor device with increased focus marginHITACHI LTD·Filed 1998·Granted May 9, 2000·16 cites·32 claims
- 0756US5933726AMethod of forming a semiconductor device have a screen stacked cell capacitorTEXAS INSTRUMENTS INC·Filed 1996·Granted Aug 3, 1999·17 cites·4 claims
- 0843US5933724AMethod of manufacturing a semiconductor integrated circuit device using a photomask in which transmitted light beam intensities are controlledHITACHI LTD·Filed 1996·Granted Aug 3, 1999·11 cites·26 claims
- 0940US6969649B2Method of manufacturing semiconductor integrated circuit devices having a memory device with a reduced bit line stray capacity and such semiconductor integrated circuit devicesTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 29, 2005·0 cites·3 claims
- 1039US6023084ASemiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing sameHITACHI LTD·Filed 1998·Granted Feb 8, 2000·4 cites·6 claims
- 1139US5937290AMethod of manufacturing semiconductor integrated circuit devices using phase shifting maskHITACHI LTD·Filed 1997·Granted Aug 10, 1999·8 cites·4 claims
- 1232US5831300ASemiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing sameHITACHI LTD·Filed 1996·Granted Nov 3, 1998·1 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →