Inventor · disambiguated record
Kenneth Wo-Wai Au
Also filed as: AU KENNETH · AU KENNETH W · AU KENNETH WO-WAI
14 granted patents·552 citations·filing 1997–2000
94Inventor score
Files withADVANCED MICRO DEVICES INC14
Top patents by PatentIndex Score
14 records- 0190US6265268B1High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 24, 2001·94 cites·21 claims
- 0288US6218689B1Method for providing a dopant level for polysilicon for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 17, 2001·64 cites·30 claims
- 0387US6248628B1Method of fabricating an ONO dielectric by nitridation for MNOS memory cellsADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 19, 2001·68 cites·20 claims
- 0486US6235586B1Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applicationsADVANCED MICRO DEVICES INC·Filed 1999·Granted May 22, 2001·59 cites·20 claims
- 0585US6117730AIntegrated method by using high temperature oxide for top oxide and periphery gate oxideADVANCED MICRO DEVICES INC·Filed 1999·Granted Sep 12, 2000·52 cites·17 claims
- 0681US6319775B1Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 20, 2001·65 cites·14 claims
- 0777US6180538B1Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-depositionADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 30, 2001·50 cites·18 claims
- 0876US6204159B1Method of forming select gate to improve reliability and performance for NAND type flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 20, 2001·36 cites·20 claims
- 0965US6380029B1Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 30, 2002·23 cites·20 claims
- 1061US6309927B1Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 30, 2001·20 cites·30 claims
- 1145US6274433B1Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 14, 2001·2 cites·4 claims
- 1244US6034394AMethods and arrangements for forming a floating gate in non-volatile memory semiconductor devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 7, 2000·7 cites·9 claims
- 1342US6232630B1Light floating gate doping to improve tunnel oxide reliabilityADVANCED MICRO DEVICES INC·Filed 1999·Granted May 15, 2001·7 cites·5 claims
- 1439US6207502B1Method of using source/drain nitride for periphery field oxide and bit-line oxideADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 27, 2001·5 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →