Inventor · disambiguated record
Keun-Hee Bai
Also filed as: BAI KEUN HEE
19 granted patents·8 pending applications·104 citations·filing 2004–2025
93Inventor score
Top patents by PatentIndex Score
27 records- 0198US9299700B2Semiconductor devices including a dummy gate structure on a finPARK SANG-JINE·Filed 2015·Granted Mar 29, 2016·33 cites·20 claims
- 0294US9755079B2Semiconductor devices including insulating gates and methods for fabricating the samePARK SANG-JINE·Filed 2016·Granted Sep 5, 2017·13 cites·8 claims
- 0394US9741854B2Method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 22, 2017·16 cites·20 claims
- 0494US9548309B2Semiconductor devices including a dummy gate structure on a finPARK SANG-JINE·Filed 2016·Granted Jan 17, 2017·10 cites·7 claims
- 0588US9947672B2Semiconductor devices including a dummy gate structure on a finSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 17, 2018·4 cites·8 claims
- 0686US10096605B2Semiconductor devices including a dummy gate structure on a finSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 9, 2018·3 cites·16 claims
- 0781US7494934B2Method of etching carbon-containing layer and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·7 cites·23 claims
- 0879US7763544B2Method of forming fine pattern of semiconductor device using sige layer as sacrificial layer, and method of forming self-aligned contacts using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 27, 2010·5 cites·11 claims
- 0977US10847416B2Semiconductor device including self-aligned contact and method of fabricating the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·20 claims
- 1076US8252655B2Method of forming semiconductor cell structure, method of forming semiconductor device including the semiconductor cell structure, and method of forming semiconductor module including the semiconductor deviceBAI KEUN-HEE·Filed 2010·Granted Aug 28, 2012·4 cites·20 claims
- 1176US8222821B2Pulse plasma matching systems and methods including impedance matching compensationBAI KEUN-HEE·Filed 2008·Granted Jul 17, 2012·4 cites·8 claims
- 1267US7566659B2Method of forming fine pattern of semiconductor device using SiGe layer as sacrificial layer, and method of forming self-aligned contacts using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 28, 2009·2 cites·11 claims
- 1363US2025254932A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1462US2025273563A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1561US10446561B2Semiconductor devices including a dummy gate structure on a finSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 15, 2019·0 cites·20 claims
- 1661US8518772B2Fabricating method of semiconductor deviceBAI KEUN-HEE·Filed 2011·Granted Aug 27, 2013·1 cites·18 claims
- 1759US2025253151A1Method for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1857US10629604B2Method of manufacturing semiconductor device having stressorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 21, 2020·0 cites·15 claims
- 1957US7705973B2Methods and systems for monitoring state of plasma chamberSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 27, 2010·0 cites·20 claims
- 2055US2024355637A1Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2149US2025380499A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2248US10304840B2Semiconductor device having stressor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 28, 2019·0 cites·20 claims
- 2348US2010151599A1Apparatus and method for manufacturing semiconductor deviceBAI KEUN-HEE·Filed 2009·Application pending·0 cites
- 2443US10991620B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 2543US8277906B2Method of processing a substrateKIM YOON-JAE·Filed 2009·Granted Oct 2, 2012·0 cites·14 claims
- 2643US2008020582A1Method of forming an opening in a semiconductor device and method of manufacturing a semiconductor device using the sameBAI KEUN-HEE·Filed 2007·Application pending·0 cites
- 2740US2005003310A1Etching process including plasma pretreatment for generating fluorine-free carbon-containing polymer on a photoresist patternSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →