Inventor · disambiguated record
Ken-Yu Chang
Also filed as: CHANG KEN-YU
36 granted patents·17 pending applications·34 citations·filing 2005–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD50HSIEH KUO-HUANG1KUO CHENG-CHENG1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
53 records- 0195US11062941B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·3 cites·21 claims
- 0293US10361120B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 23, 2019·8 cites·20 claims
- 0391US11929314B2Interconnect structures including a fin structure and a metal capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·2 cites·20 claims
- 0491US8962473B2Method of forming hybrid diffusion barrier layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 24, 2015·10 cites·19 claims
- 0586US2025357295A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0685US12252783B2Chemical vapor deposition for uniform tungsten growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 18, 2025·1 cites·20 claims
- 0783US12400853B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 0882US12300539B2Source/drain contact formation methods and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 0982US12148659B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·22 claims
- 1082US11521929B2Capping layer for liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·1 cites·20 claims
- 1182US10580693B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 1282US2025273514A1Source/drain contact formation methods and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1381US11594609B2Liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·1 cites·20 claims
- 1479US11955329B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 1579US11217524B1Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·1 cites·20 claims
- 1679US2025357297A13dic with gap-fill structures and the method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1778US12020981B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 1877US10504834B2Contact structure and the method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·2 cites·20 claims
- 1977US2025359278A1Semiconductor device with conductive liners over silicide structures and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2077US2024395611A1Contact metallization processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2176US12057397B2Capping layer for liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 2276US11742240B2Source/drain contact formation methods and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 2376US2025349667A1Die structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2475US11676859B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 2575US2024170381A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2675US2024355741A1Capping Layer For Liner-Free Conductive StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2774US9240378B2Method of forming a copper layer using physical vapor depositionTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 19, 2016·2 cites·19 claims
- 2874US2024297074A1Conductive Feature Formation and StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2974US2025070010A13dic with gap-fill structures and the method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3073US2025285962A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3171US11798843B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 3271US11670499B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 3370US10964590B2Contact metallization processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·1 cites·20 claims
- 3469US12191199B2Contact metallization processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 3569US11257712B2Source/drain contact formation methods and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 3669US2025087555A1Die structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3768US12433006B2Semiconductor device with conductive liners over silicide structures and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 3867US11817384B2Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 3967US2025188601A1Chemical vapor deposition for uniform tungsten growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4064US12327788B2Gate to source drain interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 4164US12249566B13DIC with gap-fill structures and the method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 4262US10971396B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 6, 2021·0 cites·20 claims
- 4360US11195791B2Method for forming semiconductor contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·0 cites·20 claims
- 4458US9812397B2Method of forming hybrid diffusion barrier layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 7, 2017·0 cites·19 claims
- 4558US2025233112A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4655US2024178102A1Package including backside connector and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4753US10504832B2Method for manufacturing copper layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 10, 2019·0 cites·20 claims
- 4852US9437485B2Method for line stress reduction through dummy shoulder structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·0 cites·20 claims
- 4951US2023402366A1Semiconductor device including metal surrounding via contact and method of forming the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 5049US12362198B2Interface tool and methods of operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →