Inventor · disambiguated record
Kentaro Chikamatsu
Also filed as: CHIKAMATSU KENTARO
18 granted patents·6 pending applications·60 citations·filing 2008–2025
91Inventor score
Top patents by PatentIndex Score
24 records- 0195US10600744B2Semiconductor deviceROHM CO LTD·Filed 2017·Granted Mar 24, 2020·12 cites·27 claims
- 0285US10700188B2Group III nitride semiconductor device with first and second conductive layersROHM CO LTD·Filed 2018·Granted Jun 30, 2020·3 cites·23 claims
- 0381US9729135B2Gate driverROHM CO LTD·Filed 2015·Granted Aug 8, 2017·6 cites·15 claims
- 0479US2025096110A1Semiconductor device and method for producing sameROHM CO LTD·Filed 2024·Application pending·0 cites
- 0578USD832227SSemiconductor moduleROHM CO LTD·Filed 2017·Granted Oct 30, 2018·18 cites·1 claims
- 0677US12199028B2Semiconductor device and method for producing sameROHM CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·21 claims
- 0775USD832228SSemiconductor moduleROHM CO LTD·Filed 2017·Granted Oct 30, 2018·15 cites·1 claims
- 0874US8093627B2Nitride semiconductor device and method for producing nitride semiconductor deviceOTAKE HIROTAKA·Filed 2008·Granted Jan 10, 2012·5 cites·8 claims
- 0972US11901316B2Semiconductor deviceROHM CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·12 claims
- 1070US2022416072A1Nitride semiconductor device and method of manufacturing the sameROHM CO LTD·Filed 2022·Application pending·0 cites
- 1168US12094826B2Semiconductor deviceROHM CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·19 claims
- 1266US11342290B2Semiconductor deviceROHM CO LTD·Filed 2020·Granted May 24, 2022·0 cites·17 claims
- 1365US11257938B2Group III nitride semiconductor device with first and second conductive layersROHM CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·21 claims
- 1465US2022140122A1Group iii nitride semiconductor device with first and second conductive layersROHM CO LTD·Filed 2022·Application pending·0 cites
- 1565US2025142863A1Method for manufacturing nitride semiconductor device and nitride semiconductor deviceROHM CO LTD·Filed 2025·Application pending·0 cites
- 1664US9704982B2Semiconductor device with high electron mobility transistor (HEMT) having source field plateROHM CO LTD·Filed 2016·Granted Jul 11, 2017·1 cites·16 claims
- 1762US12225738B2Method for manufacturing nitride semiconductor device and nitride semiconductor deviceROHM CO LTD·Filed 2021·Granted Feb 11, 2025·0 cites·18 claims
- 1862US11476197B2Semiconductor deviceROHM CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·16 claims
- 1958US11462635B2Nitride semiconductor device and method of manufacturing the sameROHM CO LTD·Filed 2019·Granted Oct 4, 2022·0 cites·11 claims
- 2058US2024266258A1Semiconductor deviceROHM CO LTD·Filed 2024·Application pending·0 cites
- 2157US11694954B2Semiconductor device and method for producing sameROHM CO LTD·Filed 2018·Granted Jul 4, 2023·0 cites·10 claims
- 2255US2023387285A1Nitride semiconductor device and method for manufacturing nitride semiconductor deviceROHM CO LTD·Filed 2023·Application pending·0 cites
- 2350US11908927B2Nitride semiconductor deviceROHM CO LTD·Filed 2020·Granted Feb 20, 2024·0 cites·16 claims
- 2446US12272742B2Nitride semiconductor deviceROHM CO LTD·Filed 2020·Granted Apr 8, 2025·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Kentaro Chikamatsu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →