Inventor · disambiguated record
Kenneth R. Elliott
Also filed as: ELLIOTT KENNETH · ELLIOTT KENNETH R · ELLIOTT KENNETH ROBERT
14 granted patents·122 citations·filing 1986–2020
91Inventor score
Top patents by PatentIndex Score
14 records- 0190US9900021B1Method and apparatus for digital modification and/or modulation of optical signalsHRL LAB LLC·Filed 2016·Granted Feb 20, 2018·11 cites·25 claims
- 0286US7875952B1Method of transistor level heterogeneous integration and systemHRL LAB LLC·Filed 2007·Granted Jan 25, 2011·15 cites·21 claims
- 0379US6937175B1Amplifier linearization using delta-sigma predistortionHRL LAB LLC·Filed 2004·Granted Aug 30, 2005·24 cites·35 claims
- 0468US7372084B1Low power bipolar transistors with low parasitic lossesHRL LAB LLC·Filed 2005·Granted May 13, 2008·4 cites·27 claims
- 0567US11377001B2Removable rear vehicle seatMAHINDRA N A TECH CENTER·Filed 2020·Granted Jul 5, 2022·1 cites·17 claims
- 0667US6466349B1Integrated optical transmitterHUGHES ELECTRONICS CORP·Filed 1998·Granted Oct 15, 2002·37 cites·28 claims
- 0762US7368764B1Heterojunction bipolar transistor and method to make a heterojunction bipolar transistorHRL LAB LLC·Filed 2005·Granted May 6, 2008·2 cites·19 claims
- 0861US11007962B2Structural tube connection device for a vehicle roll over protection systemMAHINDRA N A TECH CENTER·Filed 2019·Granted May 18, 2021·1 cites·20 claims
- 0960US6593869B1High efficiency, high output drive current switch with application to digital to analog conversionHRL LAB LLC·Filed 2002·Granted Jul 15, 2003·9 cites·30 claims
- 1046US9985121B1P-type diamond gate-GaN heterojunction FET structureHRL LAB LLC·Filed 2016·Granted May 29, 2018·0 cites·30 claims
- 1144US6855948B2Low base-emitter voltage heterojunction bipolar transistorHRL LAB LLC·Filed 2002·Granted Feb 15, 2005·2 cites·58 claims
- 1240US4701422AMethod of adjusting threshold voltage subsequent to fabrication of transistorROCKWELL INTERNATIONAL CORP·Filed 1986·Granted Oct 20, 1987·10 cites·16 claims
- 1334US6214678B1Growth technique for low noise high electron mobility transistors by metal organic vapor phase epitaxyHUGHES ELECTRONICS CORP·Filed 1997·Granted Apr 10, 2001·5 cites·11 claims
- 1421US5121035AHigh speed gallium arsenide latch using depletion mode logicROCKWELL INTERNATIONAL CORP·Filed 1991·Granted Jun 9, 1992·1 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →