Inventor · disambiguated record
Kenichi Hamano
Also filed as: HAMANO KENICHI
16 granted patents·2 pending applications·18 citations·filing 2010–2024
88Inventor score
Top patents by PatentIndex Score
18 records- 0182US9422640B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 23, 2016·1 cites·12 claims
- 0275US8569106B2Method for manufacturing silicon carbide semiconductor deviceHAMANO KENICHI·Filed 2010·Granted Oct 29, 2013·5 cites·8 claims
- 0374US9988738B2Method for manufacturing SiC epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Jun 5, 2018·3 cites·20 claims
- 0471US9957638B2Method for manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted May 1, 2018·2 cites·4 claims
- 0569US9903048B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 27, 2018·0 cites·9 claims
- 0668US10950435B2SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Mar 16, 2021·1 cites·13 claims
- 0765US10707075B2Semiconductor wafer, semiconductor device, and method for producing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Jul 7, 2020·1 cites·20 claims
- 0864US9400172B2Film thickness measurement methodHATTORI RYO·Filed 2011·Granted Jul 26, 2016·3 cites·3 claims
- 0963US8679952B2Method of manufacturing silicon carbide epitaxial waferTOMITA NOBUYUKI·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 1058US10711372B2Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatusMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Jul 14, 2020·0 cites·4 claims
- 1156US12369350B2Silicon carbide semiconductor device with a main cell outputting main current and a sense cell outputting sense current wherein the inclination of temperature dependent properties of the main current is approximately flat in a temperature of 0 *C or lessMITSUBISHI ELECTRIC CORP·Filed 2022·Granted Jul 22, 2025·0 cites·10 claims
- 1256US2025022754A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 1353US10370775B2Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatusMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Aug 6, 2019·0 cites·11 claims
- 1452US9752254B2Method for manufacturing a single-crystal 4H—SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Sep 5, 2017·0 cites·9 claims
- 1547US10508362B2Substrate mounting member, wafer plate, and SiC epitaxial substrate manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Dec 17, 2019·0 cites·9 claims
- 1644US11088073B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Aug 10, 2021·0 cites·19 claims
- 1744US10229830B2Method of manufacturing silicon carbide epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Mar 12, 2019·0 cites·6 claims
- 1835US2017327143A1Driving force transmission deviceJTEKT CORP·Filed 2017·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kenichi Hamano files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →