Inventor · disambiguated record
Keiichi Higashitani
Also filed as: HIGASHITANI KEIICHI
19 granted patents·5 pending applications·338 citations·filing 1995–2004
96Inventor score
Top patents by PatentIndex Score
24 records- 0178US6383910B2Method of manufacturing a semiconductor device, and a semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 7, 2002·27 cites·8 claims
- 0273US6267479B1Semiconductor device, and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jul 31, 2001·34 cites·5 claims
- 0371US6299314B1Semiconductor device with electrical isolation meansMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 9, 2001·16 cites·20 claims
- 0468US6153918ASemiconductor device with improved planarity and reduced parasitic capacitanceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 28, 2000·35 cites·8 claims
- 0564US6541823B1Semiconductor device including multiple field effect transistors and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 1, 2003·20 cites·2 claims
- 0663US6853030B2Semiconductor device including multiple field effect transistors, with first FETs having oxide spacers and the second FETs having oxide nitride oxidation protectionRENESAS TECH CORP·Filed 2003·Granted Feb 8, 2005·9 cites·2 claims
- 0763US6479873B1Semiconductor device with self-aligned contact structureMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 12, 2002·23 cites·9 claims
- 0863US6468857B2Method for forming a semiconductor device having a plurality of circuits partsMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 22, 2002·10 cites·2 claims
- 0963US6069400ASemiconductor device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 30, 2000·30 cites·12 claims
- 1063US6037630ASemiconductor device with gate electrode portion and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 14, 2000·22 cites·15 claims
- 1158US5600170AInterconnection structure of semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 4, 1997·24 cites·3 claims
- 1257US6620666B2Method of manufacturing semiconductor device of dual-gate construction, and semiconductor device manufactured thereby including forming a region of over-lapping n-type and p-type impurities with lower resistanceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 16, 2003·8 cites·2 claims
- 1355US6040627ASemiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 21, 2000·21 cites·8 claims
- 1452US6291870B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Sep 18, 2001·17 cites·36 claims
- 1551US6841459B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Jan 11, 2005·2 cites·5 claims
- 1648US6064099ALayout of well contacts and source contacts of a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 16, 2000·14 cites·9 claims
- 1746US6165878AMethod of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 26, 2000·13 cites·18 claims
- 1844US6232640B1Semiconductor device provided with a field-effect transistor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 15, 2001·8 cites·18 claims
- 1944US2005112832A1Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 2039US2003015798A1Semiconductor device and method of fabricating the semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2138US2002180047A1Method of fabricating a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2238US2005062099A1Semiconductor device including multiple field effect transistors, with first fets having oxide spacers and the second fets having oxide nitride oxidation protectionMITSUBISHI ELECTRIC CORP·Filed 2004·Application pending·0 cites
- 2337US2002081846A1Semiconductor deviceFiled 2001·Application pending·0 cites
- 2435US6531737B2Semiconductor device having an improved interlayer contact and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 11, 2003·5 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →