Inventor · disambiguated record
Kenji Hiratsuka
Also filed as: HIRATSUKA KENJI · NAKAMURA NOBUO
19 granted patents·8 pending applications·40 citations·filing 1978–2017
91Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES19HIRATSUKA KENJI3YONEDA YOSHIHIRO3DAINIPPON TORYO KK1TSUJI YUKIHIRO1
Top patents by PatentIndex Score
27 records- 0178US8772113B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Jul 8, 2014·4 cites·5 claims
- 0275US7772023B2Method of producing semiconductor optical deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Aug 10, 2010·5 cites·7 claims
- 0368US8597966B2Method for producing semiconductor optical deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Dec 3, 2013·2 cites·10 claims
- 0468US8563342B2Method of making semiconductor optical integrated device by alternately arranging spacers with integrated device arraysYONEDA YOSHIHIRO·Filed 2012·Granted Oct 22, 2013·2 cites·7 claims
- 0565US7897422B2Semiconductor light-emitting device and a method to produce the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Mar 1, 2011·2 cites·11 claims
- 0664US8039282B2Semiconductor optical device and method of fabricating the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Oct 18, 2011·2 cites·16 claims
- 0764US7807489B2Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atomsSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Oct 5, 2010·2 cites·5 claims
- 0859US8637338B2Method for producing integrated optical deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Jan 28, 2014·1 cites·5 claims
- 0959US4186234ALight transmissible high density elastic resin compositionDAINIPPON TORYO KK·Filed 1978·Granted Jan 29, 1980·16 cites·10 claims
- 1054US7456040B2Method for producing semiconductor optical deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Nov 25, 2008·2 cites·11 claims
- 1153US9627487B2Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Apr 18, 2017·0 cites·5 claims
- 1249US2017170281A1Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 1347US8964809B2Semiconductor optical integrated deviceYONEDA YOSHIHIRO·Filed 2012·Granted Feb 24, 2015·0 cites·12 claims
- 1445US2009032997A1Resin pattern formation methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 1544US9793365B2Method for manufacturing silicon carbide semiconductor device having trenchSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 17, 2017·0 cites·15 claims
- 1644US7947520B2Semiconductor laser and method of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted May 24, 2011·0 cites·21 claims
- 1744US2008283852A1Light-emitting device and a method for producing the sameTSUJI YUKIHIRO·Filed 2008·Application pending·0 cites
- 1843US6818521B2Method of manufacturing a hetero-junction bipolar transistor with epitaxially grown multi-layer films and annealing at or below 600° C.SUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Nov 16, 2004·2 cites·11 claims
- 1943US2014070830A1Measuring device, measuring method, and element manufacturing method including measuring methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 2040US8637329B2Method for producing semiconductor optical integrated deviceYONEDA YOSHIHIRO·Filed 2012·Granted Jan 28, 2014·0 cites·11 claims
- 2140US2013341648A1Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 2236US8889445B2Method for manufacturing semiconductor optical device and semiconductor optical deviceHIRATSUKA KENJI·Filed 2012·Granted Nov 18, 2014·0 cites·12 claims
- 2336US2017275779A1Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Application pending·0 cites
- 2436US2019013198A1Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Application pending·0 cites
- 2535US8409889B2Method for producing semiconductor optical deviceHIRATSUKA KENJI·Filed 2010·Granted Apr 2, 2013·0 cites·14 claims
- 2633US2018233562A1Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 2731US8216868B2Method of fabricating semiconductor laserHIRATSUKA KENJI·Filed 2010·Granted Jul 10, 2012·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →