Inventor · disambiguated record
Kenichi Iga
Also filed as: IGA KENICHI
13 granted patents·1 pending application·207 citations·filing 1980–2001
92Inventor score
Files withFURUKAWA ELECTRIC CO LTD4TOKYO INST TECH2DEV CORP OF JAPAN1HITACHI LTD1JAPAN RES DEV CORP1
Top patents by PatentIndex Score
14 records- 0178US6449300B1Surface-emitting laserTOKYO INST TECH·Filed 2000·Granted Sep 10, 2002·15 cites·5 claims
- 0276US4340966ASemiconductor laser with buffer layerKOKUSAI DENSHIN DENWA CO LTD·Filed 1980·Granted Jul 20, 1982·24 cites·2 claims
- 0372US5764828AOptical apparatus for controlling angle of divergence of ring beamKAWAGUCHI KOGAKU SANGYO·Filed 1996·Granted Jun 9, 1998·51 cites·8 claims
- 0470US5020066ASurface-emitting-type semiconductor laser deviceDEV CORP OF JAPAN·Filed 1989·Granted May 28, 1991·22 cites·20 claims
- 0567US5091756ASuperlattice structureTOKYO INST TECH·Filed 1990·Granted Feb 25, 1992·33 cites·3 claims
- 0652US5289486ASemiconductor luminous element and superlattice structureOMRON TATEISI ELECTRONICS CO·Filed 1993·Granted Feb 22, 1994·14 cites·10 claims
- 0747US6764229B1Method and apparatus for optical fiber splicingJAPAN SCIENCE & TECH CORP·Filed 2000·Granted Jul 20, 2004·3 cites·1 claims
- 0846US5789760AMultiquantum barrier Schottky junction deviceFURUKAWA ELECTRIC CO LTD·Filed 1995·Granted Aug 4, 1998·12 cites·3 claims
- 0942US5236864AMethod of manufacturing a surface-emitting type semiconductor laser deviceJAPAN RES DEV CORP·Filed 1992·Granted Aug 17, 1993·9 cites·19 claims
- 1040US5241554ALaser diode of variable beam divergence and information processor using the sameHITACHI LTD·Filed 1991·Granted Aug 31, 1993·8 cites·23 claims
- 1138US5362974AGroup II-VI material semiconductor optical device with strained multiquantum barriersFURUKAWA ELECTRIC CO LTD·Filed 1993·Granted Nov 8, 1994·6 cites·9 claims
- 1237US5932890AField effect transistor loaded with multiquantum barrierFURUKAWA ELECTRIC CO LTD·Filed 1997·Granted Aug 3, 1999·5 cites·3 claims
- 1337US5383213ASemiconductor device with current confinement structureFURUKAWA ELECTRIC CO LTD·Filed 1993·Granted Jan 17, 1995·5 cites·4 claims
- 1436US2002182823A1Wafer oxidation reactor and a method for forming a semiconductor deviceFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →