Inventor · disambiguated record
Kenya Itani
Also filed as: ITANI KENYA
7 granted patents·2 pending applications·26 citations·filing 1999–2021
79Inventor score
Top patents by PatentIndex Score
9 records- 0173US7214269B2Si-doped GaAs single crystal substrateHITACHI CABLE·Filed 2004·Granted May 8, 2007·12 cites·4 claims
- 0249US11552174B2Compound semiconductor and method for producing the sameJX NIPPON MINING & METALS CORP·Filed 2018·Granted Jan 10, 2023·0 cites·3 claims
- 0348US6878202B2Method for growing single crystal of compound semiconductor and substrate cut out therefromHITACHI CABLE·Filed 2002·Granted Apr 12, 2005·2 cites·12 claims
- 0447US6409831B2Apparatus for fabricating single crystalHITACHI CABLE·Filed 2001·Granted Jun 25, 2002·3 cites·5 claims
- 0547US2022199770A1Indium phosphide substrate and method for producing indium phosphide substrateJX NIPPON MINING & METALS CORP·Filed 2021·Application pending·0 cites
- 0646US7595509B2Single crystal wafer for semiconductor laserHITACHI CABLE·Filed 2005·Granted Sep 29, 2009·0 cites·12 claims
- 0744US2022189883A1Indium phosphide substrate and method for producing indium phosphide substrateJX NIPPON MINING & METALS CORP·Filed 2020·Application pending·0 cites
- 0843US6290773B1Method and apparatus for fabricating single crystalHITACHI CABLE·Filed 1999·Granted Sep 18, 2001·9 cites·7 claims
- 0939US7175707B2P-type GaAs single crystal and its production methodHITACHI CABLE·Filed 2003·Granted Feb 13, 2007·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →