Inventor · disambiguated record

Keung-Hee Jang

Also filed as: JANG KEUNG-HEE

1 granted patent·2 pending applications·10 citations·filing 1999–2000

32Inventor score

Technology areasH10D

Files withSAMSUNG ELECTRONICS CO LTD1

Top patents by PatentIndex Score

3 records

0140US6245620B1Method for foaming MOS transistor having bi-layered spacerSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 12, 2001·10 cites·21 claims
0230US2002098669A1Gate electrode having agglomeration prevention layer on metal silicide layer, and method for forming the sameFiled 2000·Application pending·0 cites
0323US2002003267A1Gate electrode having agglomeration preventing layer on metal silicide layer, and method for forming the sameFiled 1999·Application pending·0 cites

Join the waitlist — get patent alerts

Get an alert when Keung-Hee Jang files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →